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BSZ110N06NS3G PDF预览

BSZ110N06NS3G

更新时间: 2024-02-07 13:22:58
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
9页 244K
描述
OptiMOS3 Power-Transistor

BSZ110N06NS3G 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, S-PDSO-N5Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:26 weeks
风险等级:5.68雪崩能效等级(Eas):55 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):11 A
最大漏源导通电阻:0.011 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:S-PDSO-N5元件数量:1
端子数量:5工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:SQUARE封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):80 A表面贴装:YES
端子形式:NO LEAD端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BSZ110N06NS3G 数据手册

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BSZ110N06NS3 G  
OptiMOSTM3 Power-Transistor  
Product Summary  
Features  
V DS  
60  
11  
20  
V
• Ideal for high frequency switching and sync. rec.  
• Optimized technology for DC/DC converters  
• Excellent gate charge x R DS(on) product (FOM)  
R DS(on),max  
I D  
m  
A
• N-channel, normal level  
• 100% avalanche tested  
• Pb-free plating; RoHS compliant  
• Qualified according to JEDEC1) for target applications  
• Halogen-free according to IEC61249-2-21  
Type  
BSZ110N06NS3 G  
Package  
Marking  
PG-TSDSON-8  
110N06N  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
20  
Parameter  
Symbol Conditions  
Unit  
V
V
GS=10 V, T C=25 °C2)  
GS=10 V, T C=100 °C  
I D  
Continuous drain current  
A
20  
V
R
GS=10 V, T C=25 °C,  
11  
thJA =60K/W3)  
Pulsed drain current4)  
I D,pulse  
E AS  
T C=25 °C  
80  
55  
Avalanche energy, single pulse5)  
I D=20 A, R GS=25 Ω  
mJ  
V
V GS  
Gate source voltage  
±20  
1) J-STD20 and JESD22  
2) Current is limited by bondwire; with anR thJC=2.5 K/W the chip is able to carry 53A.  
2
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain  
connection. PCB is vertical in still air.  
4) See figure 3 for more detailed information  
5) See figure 13 for more detailed information  
Rev.2.4  
page 1  
2009-11-12  

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