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BSZ050N03LSGATMA1 PDF预览

BSZ050N03LSGATMA1

更新时间: 2024-11-05 14:41:11
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网高压开关脉冲光电二极管晶体管
页数 文件大小 规格书
9页 329K
描述
Power Field-Effect Transistor, 40A I(D), 30V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8

BSZ050N03LSGATMA1 技术参数

是否无铅:含铅是否Rohs认证:符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-N5
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:26 weeks风险等级:1.64
Is Samacsys:N其他特性:AVALANCHE RATED, HIGH VOLTAGE
雪崩能效等级(Eas):70 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):40 A最大漏源导通电阻:0.0078 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-N5
湿度敏感等级:1元件数量:1
端子数量:5工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):160 A认证状态:Not Qualified
表面贴装:YES端子形式:NO LEAD
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BSZ050N03LSGATMA1 数据手册

 浏览型号BSZ050N03LSGATMA1的Datasheet PDF文件第2页浏览型号BSZ050N03LSGATMA1的Datasheet PDF文件第3页浏览型号BSZ050N03LSGATMA1的Datasheet PDF文件第4页浏览型号BSZ050N03LSGATMA1的Datasheet PDF文件第5页浏览型号BSZ050N03LSGATMA1的Datasheet PDF文件第6页浏览型号BSZ050N03LSGATMA1的Datasheet PDF文件第7页 
BSZ050N03LS G  
OptiMOS™3 Power-MOSFET  
Product Summary  
Features  
V DS  
30  
5
V
• Fast switching MOSFET for SMPS  
• Optimized technology for DC/DC converters  
• Qualified according to JEDEC1) for target applications  
R DS(on),max  
I D  
m  
A
40  
PG-TSDSON-8  
• N-channel; Logic level  
• Excellent gate charge x R DS(on) product (FOM)  
• Very low on-resistance R DS(on)  
• Superior thermal resistance  
• Avalanche rated  
• Pb-free plating; RoHS compliant  
• Halogen-free according to IEC61249-2-21  
Type  
Package  
Marking  
BSZ050N03LS G  
PG-TSDSON-8  
050N03L  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
V
V
GS=10 V, T C=25 °C  
Continuous drain current  
40  
40  
A
GS=10 V, T C=100 °C  
V
V
GS=4.5 V, T C=25 °C  
40  
40  
GS=4.5 V,  
T C=100 °C  
V
R
GS=10 V, T A=25 °C,  
16  
thJA=60 K/W2)  
Pulsed drain current3)  
I D,pulse  
I AS  
T C=25 °C  
160  
20  
Avalanche current, single pulse4)  
T C=25 °C  
E AS  
I D=20 A, R GS=25 Ω  
Avalanche energy, single pulse  
70  
mJ  
I D=40 A, V DS=24 V,  
di /dt =200 A/µs,  
Reverse diode dv /dt  
dv /dt  
6
kV/µs  
V
T
j,max=150 °C  
V GS  
Gate source voltage  
1) J-STD20 and JESD22  
±20  
Rev. 1.3  
page 1  
2009-11-05  

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