Datasheet > BSZ050N03LSG_09

BSZ050N03LSG_09

更新时间： 2024-11-05 09:00:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	501K
描述
OptiMOS?3 Power-MOSFET

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中文翻译

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数据手册

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BSZ050N03LSG_09 数据手册

BSZ050N03LS G

OptiMOS™3 Power-MOSFET

Product Summary

Features

V _DS

• Fast switching MOSFET for SMPS

• Optimized technology for DC/DC converters

• Qualified according to JEDEC¹⁾for target applications

R _DS(on),max

I _D

mΩ

PG-TSDSON-8

• N-channel; Logic level

• Excellent gate charge x R _DS(on)product (FOM)

• Very low on-resistance R _DS(on)

• Superior thermal resistance

• Avalanche rated

• Pb-free plating; RoHS compliant

• Halogen-free according to IEC61249-2-21

Type

Package

Marking

BSZ050N03LS G

PG-TSDSON-8

050N03L

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

V _GS=10 V, T _C=25 °C

V _GS=10 V, T _C=100 °C

Continuous drain current

V _GS=4.5 V, T _C=25 °C

V _GS=4.5 V,

T _C=100 °C

V _GS=10 V, T _A=25 °C,

R _thJA=60 K/W²⁾

Pulsed drain current³⁾

I _D,pulse

I _AS

T _C=25 °C

160

Avalanche current, single pulse⁴⁾

Avalanche energy, single pulse

T _C=25 °C

E _AS

I _D=20 A, R _GS=25 Ω

I _D=40 A, V _DS=24 V,

di /dt =200 A/µs,

T _j,max=150 °C

Reverse diode dv /dt

dv /dt

kV/µs

V _GS

Gate source voltage

¹⁾J-STD20 and JESD22

±20

Rev. 1.3

page 1

2009-11-05

12 3 4 5 6 7...9

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