型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSZ0503NSI | INFINEON |
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Metal Oxide Semiconductor Field Effect Transistor | |
BSZ0503NSI_15 | INFINEON |
获取价格 |
Metal Oxide Semiconductor Field Effect Transistor | |
BSZ0506NS | INFINEON |
获取价格 |
Metal Oxide Semiconductor Field Effect Transistor | |
BSZ0506NS_15 | INFINEON |
获取价格 |
Metal Oxide Semiconductor Field Effect Transistor | |
BSZ050N03LS G | INFINEON |
获取价格 |
极低的栅极和输出电荷,结合极低的导通状态电阻和小体积封装,使 OptiMOS? 25V 成 | |
BSZ050N03LSG | INFINEON |
获取价格 |
OptiMOS?3 Power-MOSFET | |
BSZ050N03LS-G | INFINEON |
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3 Power-MOSFET | |
BSZ050N03LSG_09 | INFINEON |
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OptiMOS?3 Power-MOSFET | |
BSZ050N03LSGATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 40A I(D), 30V, 0.0078ohm, 1-Element, N-Channel, Silicon, Me | |
BSZ050N03MS G | INFINEON |
获取价格 |
极低的栅极和输出电荷,结合极低的导通状态电阻和小体积封装,使 OptiMOS™ 25V 成 |