5秒后页面跳转
BSZ042N04NSGATMA1 PDF预览

BSZ042N04NSGATMA1

更新时间: 2024-11-05 20:01:03
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网高压开关脉冲光电二极管晶体管
页数 文件大小 规格书
9页 242K
描述
Power Field-Effect Transistor, 40A I(D), 40V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8

BSZ042N04NSGATMA1 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-N5
针数:8Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:1 week
风险等级:5.77其他特性:AVALANCHE RATED, HIGH VOLTAGE
雪崩能效等级(Eas):150 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:40 V
最大漏极电流 (ID):40 A最大漏源导通电阻:0.0042 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-N5
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:5
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):160 A
认证状态:Not Qualified表面贴装:YES
端子面层:Tin (Sn)端子形式:NO LEAD
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BSZ042N04NSGATMA1 数据手册

 浏览型号BSZ042N04NSGATMA1的Datasheet PDF文件第2页浏览型号BSZ042N04NSGATMA1的Datasheet PDF文件第3页浏览型号BSZ042N04NSGATMA1的Datasheet PDF文件第4页浏览型号BSZ042N04NSGATMA1的Datasheet PDF文件第5页浏览型号BSZ042N04NSGATMA1的Datasheet PDF文件第6页浏览型号BSZ042N04NSGATMA1的Datasheet PDF文件第7页 
BSZ042N04NS G  
Product Summary  
OptiMOS™3 Power-Transistor  
V DS  
40  
4.2  
40  
V
Features  
R DS(on),max  
I D  
m  
A
• Fast switching MOSFET for SMPS  
• Optimized technology for DC/DC converters  
• Qualified according to JEDEC1) for target applications  
PG-TSDSON-8  
• N-channel; Normal level  
• Excellent gate charge x R DS(on) product (FOM)  
• Very low on-resistance R DS(on)  
• Superior thermal resistance  
• Avalanche rated  
• Pb-free plating; RoHS compliant  
• Halogen-free according to IEC61249-2-21  
Type  
Package  
Marking  
BSZ042N04NS G  
PG-TSDSON-8  
042N04N  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
V
V
GS=10 V, T C=25 °C  
GS=10 V, T C=100 °C  
Continuous drain current  
40  
40  
A
Pulsed drain current3)  
I D,pulse  
I AS  
T C=25 °C  
160  
20  
Avalanche current, single pulse4)  
Avalanche energy, single pulse  
Gate source voltage  
T C=25 °C  
E AS  
V GS  
I D=20 A, R GS=25 Ω  
150  
±20  
mJ  
V
1) J-STD20 and JESD22  
Rev. 1.3  
page 1  
2009-11-05  

与BSZ042N04NSGATMA1相关器件

型号 品牌 获取价格 描述 数据表
BSZ042N06NS INFINEON

获取价格

New OptiMOS™ 40V and 60V
BSZ042N06NSATMA1 INFINEON

获取价格

Power Field-Effect Transistor, 40A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Me
BSZ0500NSI INFINEON

获取价格

Metal Oxide Semiconductor Field Effect Transistor
BSZ0500NSI_15 INFINEON

获取价格

Metal Oxide Semiconductor Field Effect Transistor
BSZ0501NSI INFINEON

获取价格

Metal Oxide Semiconductor Field Effect Transistor
BSZ0501NSI_15 INFINEON

获取价格

Metal Oxide Semiconductor Field Effect Transistor
BSZ0502NSI INFINEON

获取价格

Metal Oxide Semiconductor Field Effect Transistor
BSZ0502NSI_15 INFINEON

获取价格

Metal Oxide Semiconductor Field Effect Transistor
BSZ0503NSI INFINEON

获取价格

Metal Oxide Semiconductor Field Effect Transistor
BSZ0503NSI_15 INFINEON

获取价格

Metal Oxide Semiconductor Field Effect Transistor