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BST39 PDF预览

BST39

更新时间: 2024-09-16 12:53:47
品牌 Logo 应用领域
TYSEMI /
页数 文件大小 规格书
2页 127K
描述
Low current (max. 50 mA) High voltage (max. 300 V). peak base current IBM 100 mA

BST39 数据手册

 浏览型号BST39的Datasheet PDF文件第2页 
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Product specification  
BST39; BST40  
Features  
Low current (max. 50 mA)  
High voltage (max. 300 V).  
Absolute Maximum Ratings Ta = 25  
Parameter  
Symbol  
VCBO  
Rating  
400  
Unit  
V
collector-base voltage  
(open emitte)  
BST39  
BST40  
BST39  
BST40  
300  
V
collector-emitter voltage  
(open-base )  
350  
V
VCEO  
250  
V
emitter-base voltage (open collector)  
collector current (DC)  
VEBO  
IC  
5
V
100  
mA  
mA  
mA  
W
peak collector current  
ICM  
200  
peak base current  
IBM  
100  
Ptot  
1.3  
total power dissipation Tamb  
storage temperature  
25  
*
Tstg  
Tj  
-65 to150  
150  
junction temperature  
operating ambient temperature  
Tamb  
Rth j-a  
Rth j-s  
-65 to150  
96  
thermal resistance from junction to ambient *  
K/W  
K/W  
thermal resistance from junction to soldering point  
16  
* Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for  
collector 6 cm2.  
http://www.twtysemi.com  
1of 2  
sales@twtysemi.com  
4008-318-123  

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