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BST16

更新时间： 2024-11-20 22:27:55

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描述
PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

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BST16 数据手册

SOT89 PNP SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

BST16

ISSUE 3 – FEBRUARY 1996

✪

FEATURES

High V_CEO

Low saturation voltage

COMPLEMENTARY TYPE –

PARTMARKING DETAIL –

BST39

BT2

SOT89

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

S YMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Co lle cto r-Ba s e Vo lta g e

-350

Co lle cto r-Em itte r Vo lta g e

Em itte r-Ba s e Vo lta g e

-300

-4

Pe ak Pu ls e Cu rren t

-1

-500

Co n tin u o u s Co lle cto r Cu rre n t

Po w e r Dis s ip a tio n a t T_{a m b}=25°C

I_C

m A

°C

P_{to t}

Op e ratin g a n d S to ra g e Te m p e ratu re

Ran g e

T_j:T_{s tg}

-65 to +150

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherw ise stated).

am b

PARAMETER

S YMBOL MIN.

TYP.

MAX. UNIT

CONDITIONS .

Co lle cto r-Ba s e

Bre akd o w n Vo ltag e

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

-350

-300

-4

I_C=-100µA

Co lle cto r-Em itte r

Bre akd o w n Vo ltag e

I_C=-1m A

Em itte r-Ba s e

Bre akd o w n Vo ltag e

I_E=-100µA

V_CB=-280V

V_CB=-250V

V_EB=-4V

Co lle cto r Cu t-Off

Cu rre n t

-1

µA

Co lle cto r Cu t-Off

Cu rre n t

I_CEO

-50

-20

Em itte r Cu t-Off Cu rren t I_EBO

Co lle cto r-Em itte r

S atu ra tio n Vo lta g e

V_{CE(s a t)}

- 2.0

-0.5

I_C=-50m A, I_B=-5m A*

I_C=-30m A, I_B=-3m A*

S ta tic Fo rw a rd Cu rren t h_FE

Tra n s fe r Ra tio

150

I_C=-50m A, V_CE=-10V*

Tra n s itio n Fre q u e n cy

f_T

MHz

p F

I_C=-10m A, V_CE=-10V*

f = 30MHz

Ou tp u t Ca p a cita n ce

C_{o b o}

V_CB=-10V, f=1MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

For typical characteristics graphs see FMMTA92 datasheet.

3 - 76

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