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BSS92E6296

更新时间: 2024-11-21 21:12:03
品牌 Logo 应用领域
英飞凌 - INFINEON 开关晶体管
页数 文件大小 规格书
7页 92K
描述
Small Signal Field-Effect Transistor, 0.15A I(D), 240V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

BSS92E6296 技术参数

生命周期:Obsolete包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.1
其他特性:LOGIC LEVEL COMPATIBLE配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:240 V最大漏极电流 (ID):0.15 A
最大漏源导通电阻:20 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):15 pFJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:P-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BSS92E6296 数据手册

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BSS 92  
®
SIPMOS Small-Signal Transistor  
• P channel  
• Enhancement mode  
• Logic Level  
• V  
= -0.8...-2.0 V  
GS(th)  
Pin 1  
G
Pin 2  
D
Pin 3  
S
Type  
Package  
Marking  
VDS  
ID  
RDS(on)  
BSS 92  
-240 V  
-0.15 A  
20  
TO-92  
SS92  
Type  
Ordering Code  
Q62702-S497  
Q62702-S633  
Q62702-S502  
Tape and Reel Information  
BSS 92  
BSS 92  
BSS 92  
E6288  
E6296  
E6325  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Drain source voltage  
Drain-gate voltage  
V
-240  
V
DS  
V
DGR  
R
= 20 kΩ  
-240  
GS  
Gate source voltage  
V
±
20  
-0.15  
-0.6  
1
GS  
Continuous drain current  
I
A
D
T = 33 ˚C  
A
DC drain current, pulsed  
I
Dpuls  
T = 25 ˚C  
A
Power dissipation  
P
W
tot  
T = 25 ˚C  
A
Data Sheet  
1
05.99  

BSS92E6296 替代型号

型号 品牌 替代类型 描述 数据表
BSS92E6325 INFINEON

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Small Signal Field-Effect Transistor, 0.15A I(D), 240V, 1-Element, P-Channel, Silicon, Met
BSS92 INFINEON

功能相似

SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)

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