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BSS87 PDF预览

BSS87

更新时间: 2024-06-27 12:13:40
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
2页 591K
描述
N-Channel MOSFET

BSS87 数据手册

 浏览型号BSS87的Datasheet PDF文件第2页 
SMD Type  
MOSFET  
N-Channel MOSFET  
BSS87 (KSS87)  
1.70 0.1  
Features  
VDS (V) = 200V  
ID = 0.28 A (VGS = 10V)  
0.42 0.1  
0.46 0.1  
RDS(ON) 6Ω (VGS = 10V)  
High-speed switching  
d
No secondary breakdown.  
1.Gate  
2.Drain  
g
3.Source  
s
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Drain-Source Voltage  
Symbol  
Rating  
200  
±20  
0.28  
1.1  
Unit  
V
V
DS  
GS  
Gate-Source Voltage  
V
Continuous Drain Current  
Pulsed Drain Current  
ID  
A
I
DM  
Power Dissipation  
P
D
1
W
Thermal Resistance.Junction- to-Ambient  
Junction Temperature  
R
thJA  
125  
150  
/W  
T
J
Storage Temperature Range  
T
stg  
-65 to 150  
Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test Conditions  
Min  
Typ  
Max  
Unit  
V
Drain-Source Breakdown Voltage  
V
DSS  
200  
I
D
=250μA, VGS=0V  
DS=60V, VGS=0V  
DS=200V, VGS=0V  
DS=0V, VGS=±20V  
V
V
V
V
V
V
0.2  
60  
Zero Gate Voltage Drain Current  
I
DSS  
GSS  
uA  
Gate-Body Leakage Current  
Gate Threshold Voltage  
Static Drain-Source On-Resistance  
Forward Transconductance  
Input Capacitance  
I
nA  
V
±100  
2.8  
V
GS(th)  
DS(O  
FS  
iss  
oss  
rss  
DS=VGS , I  
GS=10V, I  
DS=25V, I  
D=1mA  
0.8  
R
n)  
D=0.4A  
6
Ω
g
D=0.4A  
350  
mS  
C
60  
25  
10  
10  
25  
V
V
GS=0V, VDS=25V  
pF  
ns  
Output Capacitance  
C
Reverse Transfer Capacitance  
Turn-On DelayTime  
C
t
d(on)  
d(off)  
GS=0 to 10V, VDS=50V, ID=250mA  
Turn-Off DelayTime  
t
Marking  
Marking  
KA  
1
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