Datasheet > BSS84ZG-AE2-R

BSS84ZG-AE2-R

更新时间： 2024-11-12 07:09:15

品牌	Logo	应用领域
友顺 - UTC		晶体晶体管场效应晶体管
页数	文件大小	规格书
3页	161K
描述
0.13A, 50V P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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中文翻译

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数据手册

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BSS84ZG-AE2-R 数据手册

UNISONIC TECHNOLOGIES CO., LTD

BSS84Z

Preliminary

Power MOSFET

0.13A, 50V P-CHANNEL

ENHANCEMENT MODE FIELD

EFFECT TRANSISTOR

DESCRIPTION

These P-Channel enhancement mode field vertical D-MOS

transistors are in a SOT-23-3 SMD package, and in most

applications they require up to 0.13A DC and can deliver current up

to 0.52A.

This product is particularly suited to low voltage applications

requiring a low current high side switch.

FEATURES

* R_DS(ON)=10Ω @ V_GS=-5V

SYMBOL

2.Drain

1.Gate

3.Source

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Lead Free

Halogen Free

BSS84ZG-AE2-R

BSS84ZL-AE2-R

SOT-23-3

Tape Reel

Note: Pin Assignment: G: Gate D: Drain S: Source

MARKING

www.unisonic.com.tw

1 of 3

QW-R502-719.b

12 3

中文翻译

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