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BSS84XHZG

更新时间: 2024-11-18 11:08:23
品牌 Logo 应用领域
罗姆 - ROHM 开关驱动继电器驱动器
页数 文件大小 规格书
14页 5540K
描述
BSS84XHZG是具有较高安装可靠性的车载用超小型MOSFET,利用先进的Wettable Flank成型技术确保封装侧面电极部分的高度为125μm。采用底部电极结构的封装确保稳定的焊接品质,使部件安装后焊接状态的自动光学检查(AOI)更准确。有助于车载ECU和ADAS相机模块等车载部件的小型化。适合用于高边负载开关、开关电路、继电器驱动器。

BSS84XHZG 数据手册

 浏览型号BSS84XHZG的Datasheet PDF文件第2页浏览型号BSS84XHZG的Datasheet PDF文件第3页浏览型号BSS84XHZG的Datasheet PDF文件第4页浏览型号BSS84XHZG的Datasheet PDF文件第5页浏览型号BSS84XHZG的Datasheet PDF文件第6页浏览型号BSS84XHZG的Datasheet PDF文件第7页 
BSS84X HZG  
Datasheet  
Pch -60V -230mA Small Signal MOSFET  
AEC-Q101 Qualified  
llOutline  
VDSS  
-60V  
5.3Ω  
RDS(on)(Max.)  
DFN1010-3W  
ID  
±230mA  
1.0W  
PD  
llInner circuit  
llFeatures  
1) Leadless ultra small and exposed drain pad  
for excellent thermal conduction SMD plastic  
package (1.0×1.0×0.4mm)  
2) Side wettable Flanks for automated optical  
solder inspection(AOI).  
Tin-plated 100% solderable side pads  
guarantees Min.125μm  
llPackaging specifications  
3) AEC-Q101 qualified  
4) -4.5V Drive  
Embossed  
Tape  
Packing  
Type  
Reel size (mm)  
Tape width (mm)  
Quantity (pcs)  
Taping code  
Marking  
180  
8.0  
llApplication  
Switching circuits  
High-side loadswitch  
Relay driver  
8000  
G2CR  
VR  
llAbsolute maximum ratings (T = 25°C ,unless otherwise specified)  
a
Parameter  
Drain - Source voltage  
Symbol  
VDSS  
ID  
Value  
Unit  
V
-60  
±230  
Continuous drain current  
Pulsed drain current  
mA  
mA  
V
*1  
IDP  
±920  
VGSS  
Gate - Source voltage  
±20  
*2  
PD  
Power dissipation  
1.0  
W
Tj  
Junction temperature  
150  
Tstg  
Operating junction and storage temperature range  
-55 to +150  
www.rohm.com  
© 2020 ROHMCo., Ltd. All rights reserved.  
1/11  
- Rev.001  

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