Datasheet > BSS84KEJ

BSS84KEJ

更新时间： 2024-04-09 19:01:26

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
7页	497K
描述
SOT-523

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中文翻译

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数据手册

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BSS84KEJ 数据手册

RoHS

COMPLIANT

BSS84KEJ

P-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

-60 V

● I_D

-0.26 A

＜3 Ω

＜3.5 Ω

● R_DS(ON)( at V_GS=-10V)

● R_DS(ON)( at V_GS=-4.5V)

● Gate-Source ESD Rating Up to 2KV (HBM)

General Description

● Operated at Low Logic Level Gate Drive

● P-Channel Switch with Low R_DS(on)

● Epoxy Meets UL 94 V-0 Flammability Rating

● Moisture Sensitivity Level 1

● Halogen Free

Applications

● Power management

● Portable equipment

Absolute Maximum Ratings (T =25℃ unless otherwise noted)

■

Parameter

Symbol

Limit

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

-60

±20

-0.26

-0.16

-1.2

T_A=25℃

Drain Current

I_D

T_A=100℃

Pulsed Drain Current ^A

Total Power Dissipation ^B

I_DM

0.27

T_A=25℃

P_D

℃

0.1

T_A=100℃

Junction and Storage Temperature Range

T_J,T_STG

-55～+150

■Thermal resistance

Parameter

Symbol

Typ

Max

Units

Thermal Resistance Junction-to-Ambient ^C

Steady-State

R_θJA

370

460

℃/W

Ordering Information (Example)

■

PACKING

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

DELIVERY

MODE

PREFERED P/N

Marking

CODE

BSS84KEJ

84K

3000

30000

120000

7“ reel

1 / 7

S-E265

Rev.1.0,03-Nov-22

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

12 3 4 5 6 7

中文翻译

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