Datasheet > BSS83P

BSS83P

更新时间： 2024-11-19 12:49:39

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TYSEMI		/
页数	文件大小	规格书
4页	624K
描述
SIPMOS Small-Signal-Transistor

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中文翻译

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数据手册

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BSS83P 数据手册

SMD Type

Product specification

BSS 83 P

SIPMOS Small-Signal-Transistor

Features

Product Summary

P-Channel

Drain source voltage

-60

Enhancement mode

Drain-source on-state resistance R

DS(on)

Avalanche rated

Logic Level

Continuous drain current

-0.33

dv/dt rated

VPS05161

Type

Package

SOT-23

Ordering Code

Marking Pin 1

YAs

PIN 2

PIN 3

BSS 83 P

Q67041-S1416

Maximum Ratings,at T = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Continuous drain current

T = 25 °C

-0.33

-0.27

T = 70 °C

Pulsed drain current

-1.32

D puls

T = 25 °C

Avalanche energy, single pulse

9.5

I = -0.33 A , V = -25 V, R = 25

Avalanche energy, periodic limited by T

0.036

jmax

Reverse diode dv/dt

dv/dt

kV/µs

I = -0.33 A, V = -48 V, di/dt = 200 A/µs,

= 150 °C

jmax

Gate source voltage

Power dissipation

0.36

tot

T = 25 °C

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55...+150

55/150/56

°C

stg

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