BSS82B-CL

更新时间： 2024-10-02 03:22:55

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捷特科 - ZETEX		晶体开关晶体管局域网
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描述
SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS

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中文翻译

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数据手册

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BSS82B-CL 数据手册

SOT23 PNP SILICON PLANAR

SWITCHING TRANSISTORS

BSS82B

BSS82C

ISSUE 2 SEPTEMBER 95

✪

PARTMARKING DETAILS -

BSS82B - CL

BSS82C - CM

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Collector-Base Voltage

-60

Collector-Emitter Voltage

Emitter-Base Voltage

-5

Peak Pulse Current

-800

°C

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

P_TOT

330

t_j:t_stg

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

= 25°C).

amb

PARAMETER

SYMBOL MIN.

MAX. UNIT CONDITIONS.

Collector-Base

Breakdown Voltage

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

-60

-5

I_C=-10µA

I_C=-10mA*

I_E=-10µA

V_CB=-50V,

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

-10

µA

V_CB=-50V, T_amb=150 °C

Emitter Cut-Off

Current

I_EBO

-10

V_BE=-3V

Collector-Emitter

Saturation Voltage

V_CE(sat)

-0.4

-1.6

I_C=-150mA,I_B=-15mA*

I_C=-500mA,I_B=50mA*

Static Forward

Current

Transfer Ratio

BSS80B

BSS80C

h_FE

f_T

100

120

300

I_C=150mA,V_CE=10V

Transition Frequency

200

MHz

V_CE=-20V,I_C=-50mA

f=100MHz

Output Capacitance

Delay Time

C_obo

t_d

V_CB=-10V,f=1MHz

Rise Time

t_r

V_CC=-30V, I_C=-150mA

I_B1=-I_B2=-15mA

Storage Time

Fall Time

t_s

t_f

* Measured under pulsed conditions. Pulse width = 300µs. Duty cycle 2%

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中文翻译

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