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BSS82B PDF预览

BSS82B

更新时间: 2024-11-19 06:44:23
品牌 Logo 应用领域
科信 - KEXIN 晶体开关晶体管
页数 文件大小 规格书
2页 41K
描述
PNP Silicon Switching Transistors

BSS82B 数据手册

 浏览型号BSS82B的Datasheet PDF文件第2页 
SMD Type  
Transistors  
PNP Silicon Switching Transistors  
BSS80,BSS82  
SOT-23  
Unit: mm  
+0.1  
2.9  
-0.1  
+0.1  
0.4  
-0.1  
3
Features  
High DC current gain: 0.1mA to 500 mA.  
Low collector-emitter saturation voltage.  
1
2
+0.1  
0.95  
-0.1  
+0.05  
0.1  
-0.01  
+0.1  
1.9  
-0.1  
1.Base  
2.Emitter  
3.collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
BSS80  
40  
BSS82  
60  
Unit  
V
V
60  
5
V
800  
1
mA  
A
Peak collector current  
Base current  
ICM  
100  
200  
330  
150  
IB  
mA  
mA  
mW  
Peak base current  
IBM  
Ptot  
Total power dissipation,TS = 77  
Junction temperature  
Storage temperature  
Junction - soldering point  
Tj  
-65 to +150  
220  
Tstg  
RthJS  
K/W  
1
www.kexin.com.cn  

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