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BSS79B PDF预览

BSS79B

更新时间: 2024-11-27 03:22:55
品牌 Logo 应用领域
捷特科 - ZETEX 晶体开关晶体管局域网
页数 文件大小 规格书
1页 30K
描述
SOT23 NPN SILICON PLANAR SWITCHING TRANSISTOR

BSS79B 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:unknown
HTS代码:8541.21.00.95风险等级:5.26
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):40
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
最大功率耗散 (Abs):0.225 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
最大关闭时间(toff):285 ns最大开启时间(吨):20 ns
Base Number Matches:1

BSS79B 数据手册

  
SOT23 NPN SILICON PLANAR  
SWITCHING TRANSISTOR  
BSS79B  
BSS79C  
ISSUE 2 – SEPTEMBER 95  
PARTMARKING DETAILS -  
BSS79B - CE  
BSS79C - CF  
E
C
B
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
75  
Collector-Emitter Voltage  
Emitter-Base Voltage  
40  
6
V
V
Peak Pulse Current  
800  
mA  
mW  
°C  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
PTOT  
330  
tj:tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C).  
amb  
PARAMETER  
SYMBOL MIN.  
MAX. UNIT CONDITIONS.  
Collector-Base Breakdown  
Voltage  
V(BR)CBO  
75  
40  
6
V
V
V
IC=10µA  
Collector-Emitter Breakdown  
Voltage  
V(BR)CEO  
IC=10mA  
Emitter-Base Breakdown Voltage V(BR)EBO  
IE=10µA  
Collector Base Cut-Off Current  
ICBO  
10  
10  
nA  
µA  
VCB=60V  
VCB=60V, Tamb=150 C  
o
Emitter Base Cut-Off Current  
IEBO  
10  
nA  
VBE=3.0V  
Collector-Emitter Saturation  
Voltage  
VCE(sat)  
0.3  
1.0  
V
V
IC=150mA, IB=15mA  
IC=500mA, IB=50mA  
Static Forward  
Current  
Transfer Ratio  
BSS79B  
BSS79C  
hFE  
fT  
40  
100  
120  
300  
IC=150mA, VCE=10V  
IC= 150mA, VCE=10V  
Transition Frequency  
250  
MHz  
VCE=20V, IC=20mA  
f=100MHz  
Collector-Base Capacitance  
Delay Time  
Cobo  
td  
8
pF  
ns  
ns  
ns  
ns  
VCB=10V, f=1MHz  
10  
10  
225  
60  
VCC=30V, IC=150mA  
IB1=IB2=15mA  
Rise Time  
tr  
Storage Time  
Fall Time  
ts  
VCC=30V, IC=150mA  
B1=IB2=15mA  
I
tf  
PAGE NUMBER  

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