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BSS66TA PDF预览

BSS66TA

更新时间: 2024-11-25 03:47:07
品牌 Logo 应用领域
美台 - DIODES 开关光电二极管晶体管
页数 文件大小 规格书
36页 760K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon

BSS66TA 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.27
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):15
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
参考标准:CECC表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHz最大关闭时间(toff):250 ns
最大开启时间(吨):70 nsBase Number Matches:1

BSS66TA 数据手册

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