Datasheet > BSS66R-M8

BSS66R-M8

更新时间： 2024-01-26 20:16:28

品牌	Logo	应用领域
捷特科 - ZETEX		晶体开关晶体管局域网
页数	文件大小	规格书
1页	37K
描述
SOT23 NPN SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BSS66R-M8 数据手册

SOT23 NPN SILICON PLANAR MEDIUM

POWER SWITCHING TRANSISTORS

BSS66

BSS67

ISSUE 2 SEPTEMBER 1995

✪

PARTMARKING DETAILS BSS66 - M6

BSS67 - M7

BSS66R - M8

BSS67R - M9

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

200

Peak Pulse Current

°C

Continuous Collector Current

Base Current

I_C

100

I_B

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

P_TOT

t_j:t_stg

330

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

= 25°C).

amb

PARAMETER

SYMBOL MIN. MAX. UNIT

CONDITIONS.

Collector-Emitter Breakdown Voltage

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector- Emitter Cut-off Current

I =1mA

I =10µA

=30V

Collector-Emitter

Saturation Voltage

0.20

0.30

I =10mA, I =1mA

I =50mA, I =5mA*

Base-Emitter Saturation Voltage

0.65

0.85

0.95

I =10mA, I =1mA

I =50mA, I =5mA*

Static Forward Current

Transfer Ratio

BSS66

I =100µA,

I =1mA,

150

300

I =10mA, V =1V

I =50mA*,

I =100mA*,

Static Forward Current

Transfer Ratio

BSS67

100

I =100µA,

I =1mA,

I =10mA, V =1V

I =50mA*,

I =100mA*,

Transition Frequency

BSS66

BSS67

250

300

MHz

I =10mA, V =20V

f=100MHz

Collector-Base Capacitance

Emitter-Base Capacitance

Noise Figure

=5V, f=100kHz

=0.5V, f=100kHz

Typ. 6

I =100µA, V =5V

R =1kΩ, f=10Hz to15.7 kHz

Switching times: Delay; Rise

Storage Time

Fall Time

t ; t

=3V, I =10mA

= I =1mA

200

* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

PAGE NUMBER

中文翻译

下载PDF

与BSS66R-M8相关器件

型号	品牌	获取价格	描述	数据表
BSS66RTA	ZETEX	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
BSS66RTA	DIODES	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
BSS66RTC	DIODES	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
BSS66TA	DIODES	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
BSS66TC	ZETEX	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
BSS67	ZETEX	获取价格	SOT23 NPN SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS
BSS670	ROHM	获取价格	BSS670 is single Nch 60V 650mA MOSFET and ESD protection diode are included in the SST3 pa
BSS670AHZG	ROHM	获取价格	BSS670AHZG is Single Nch 60V 650mA MOSFET and ESD protection diode are included in the SST
BSS670S2L	INFINEON	获取价格	OptiMOS Buck converter series
BSS670S2L	TYSEMI	获取价格	Product specification