Datasheet > BSS64R-U6

BSS64R-U6

更新时间： 2024-11-24 03:22:55

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页数	文件大小	规格书
1页	30K
描述
SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

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BSS64R-U6 数据手册

SOT23 NPN SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

BSS64

ISSUE 2 SEPTEMBER 95

✪

COMPLIMENTARY TYPE -

PARTMARKING DETAIL -

BSS63

BSS64 - U3

BSS64R - U6

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

VALUE

UNIT

Collector-Base Voltage

120

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

100

°C

P_TOT

t_j:t_stg

330

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

= 25°C).

amb

PARAMETER

SYMBOL MIN.

MAX.

UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

V_(BR)CBO

120

I_C=100µA

Collector-Emitter

Breakdown Voltage

V_(BR)CEO

I_C=4mA

Emitter-Base Breakdown V_(BR)EBO

Voltage

I_E=100µA

Collector Cut-Off Current I_CBO

100

µ A

V_CB=90V

V_CB=90V,T_j=150 C

Emitter Cut-Off Current

I_EBO

200

V_EB=5V

Collector-Emitter

Saturation Voltage

V_CE(sat)

150

200

I_C=4mA, I_B=400µA

I_C=50mA, I_B=15mA

Base-Emitter Saturation

Voltage

V_BE(sat)

1.2

I_C=4mA, I_B=400µA

Static Forward Current

Typ.

h_FE

I_C=1mA, V_CE=-1V

I_C=10mA, V_CE=1V

I_C=20mA, V_CE=1V

Transition Frequency

Output Capacitance

Typ.

100

f_T

MHz

V_CE=10V, I_C=4mA

f=35 MHz

Typ.

C_obo

V_CB=10V, f=1MHz

* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

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