Datasheet > BSS63

BSS63

更新时间： 2024-09-22 22:39:39

品牌	Logo	应用领域
KEC		晶体晶体管开关光电二极管局域网
页数	文件大小	规格书
1页	63K
描述
EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)

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中文翻译

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数据手册

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BSS63 数据手册

SEMICONDUCTOR

BSS63

EPITAXIAL PLANAR PNP TRANSISTOR

TECHNICAL DATA

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION.

DIM MILLIMETERS

2.93 0.20

1.30+0.20/-0.15

1.30 MAX

0.45+0.15/-0.05

2.40+0.30/-0.20

1.90

MAXIMUM RATING (Ta=25ᴱ)

CHARACTERISTIC

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

-110

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

0.95

0.13+0.10/-0.05

0.00 ~ 0.10

0.55

-100

-6

0.20 MIN

1.00+0.20/-0.10

-100

ᴱ

I_E

Emitter Current

100

P_C

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

200

1. EMITTER

2. BASE

T_j

150

3. COLLECTOR

T_stg

-65ᴕ150

ᴱ

SOT-23

Marking

Lot No.

Type Name

ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)

CHARACTERISTIC

Collector-Emitter Breakdown Voltage

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

SYMBOL

TEST CONDITION

MIN.

TYP. MAX. UNIT

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

I_C=-10mA, I_B=0

-100

I_C=-10ỌA, I_E=0

-110

I_E=-10ỌA, I_C=0

-6

V_CB=-90V, I_E=0

-100

-50

-200

ỌA

I_CBO

I_EBO

Collector Cut-off Current

Emitter Cut-off Current

V_CB=-90V, I_E=0, Ta=150ᴱ

V_EB=-5V, I_C=0

V_CE=-1V, I_C=-10mA

V_CE=-1V, I_C=-25mA

I_C=-25mA, I_B=-2.5mA

I_C=-75mA, I_B=-7.5mA

h_FE

DC Current Gain

V_BE(sat)

V_CE(sat)

Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

-0.9

-0.25

-0.9

f_T

I_C=-25mA, V_CE=-5V, f=100MHz

V_CB=-10V, I_E=0, f=1MHz

Transition Frequency

MHz

C_ob

Collector Output Capacitance

1998. 6. 15

Revision No : 1

1/1

中文翻译

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