是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 零件包装代码: | SOT-89 |
包装说明: | SMALL OUTLINE, R-PSSO-F3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.06 |
其他特性: | CMOS COMPATIBLE | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 240 V |
最大漏极电流 (Abs) (ID): | 0.2 A | 最大漏极电流 (ID): | 0.2 A |
最大漏源导通电阻: | 12 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 15 pF | JEDEC-95代码: | TO-243AA |
JESD-30 代码: | R-PSSO-F3 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 1 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | FLAT |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSS192,115 | NXP |
获取价格 |
BSS192 - 240 V, P-channel vertical D-MOS transistor SOT-89 3-Pin | |
BSS192,135 | NXP |
获取价格 |
BSS192 - 240 V, P-channel vertical D-MOS transistor SOT-89 3-Pin | |
BSS192P | INFINEON |
获取价格 |
SIPMOS Small-Signal-Transistor | |
BSS192P_06 | INFINEON |
获取价格 |
SIPMOS Small-Signal-Transistor | |
BSS192PE6327 | INFINEON |
获取价格 |
Small Signal Field-Effect Transistor, 0.19A I(D), 250V, 1-Element, P-Channel, Silicon, Met | |
BSS192PE6327 | ROCHESTER |
获取价格 |
190mA, 250V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT PACKAGE-3 | |
BSS192PH6327 | INFINEON |
获取价格 |
Small Signal Field-Effect Transistor, 0.19A I(D), 250V, 1-Element, P-Channel, Silicon, Met | |
BSS192PH6327FTSA1 | INFINEON |
获取价格 |
Small Signal Field-Effect Transistor, 0.19A I(D), 250V, 1-Element, P-Channel, Silicon, Met | |
BSS192PL6327 | INFINEON |
获取价格 |
Small Signal Field-Effect Transistor, 0.19A I(D), 250V, 1-Element, P-Channel, Silicon, Met | |
BSS192T/R | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 150MA I(D) | SOT-89 |