型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSS169_07 | INFINEON |
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SIPMOS Small-Signal-Transistor | |
BSS169E6906 | INFINEON |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
BSS169H6327 | INFINEON |
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Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Met | |
BSS169-H6327 | INFINEON |
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SIPMOS Small-Signal-Transistor | |
BSS169H6327XTSA1 | INFINEON |
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Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Met | |
BSS169I | INFINEON |
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N-沟道耗尽模式 MOSFET BSP135I 采用 SOT-223 封装,其特性为 VD | |
BSS169L6327 | INFINEON |
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Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Met | |
BSS169L6906 | INFINEON |
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Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Met | |
BSS169N | INFINEON |
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SIPMOS Small-Signal-Transistor | |
BSS17 | ETC |
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TRANSISTOR | BJT | PNP | 75V V(BR)CEO | 2A I(C) | TO-39 |