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BSS159NL6906HTSA1 PDF预览

BSS159NL6906HTSA1

更新时间: 2024-11-18 14:48:07
品牌 Logo 应用领域
英飞凌 - INFINEON 光电二极管
页数 文件大小 规格书
9页 310K
描述
Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3

BSS159NL6906HTSA1 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.62
Base Number Matches:1

BSS159NL6906HTSA1 数据手册

 浏览型号BSS159NL6906HTSA1的Datasheet PDF文件第2页浏览型号BSS159NL6906HTSA1的Datasheet PDF文件第3页浏览型号BSS159NL6906HTSA1的Datasheet PDF文件第4页浏览型号BSS159NL6906HTSA1的Datasheet PDF文件第5页浏览型号BSS159NL6906HTSA1的Datasheet PDF文件第6页浏览型号BSS159NL6906HTSA1的Datasheet PDF文件第7页 
BSS159N  
SIPMOS® Small-Signal-Transistor  
Product Summary  
V DS  
Features  
60  
8
V
A
• N-channel  
• Depletion mode  
R DS(on),max  
I DSS,min  
0.13  
• dv /dt rated  
• Available with V GS(th) indicator on reel  
• Pb-free lead-plating; RoHS compliant  
SOT-23  
Type  
Package  
Pb-free Tape and Reel Information  
Marking  
SGs  
BSS159  
BSS159  
PG-SOT-23 Yes  
PG-SOT-23 Yes  
L6327: 3000 pcs/reel  
L6906: 3000 pcs/reel sorted in V GS(th) bands1)  
SGs  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
T A=25 °C  
T A=70 °C  
T A=25 °C  
Continuous drain current  
0.23  
0.18  
0.92  
A
I D,pulse  
dv /dt  
V GS  
Pulsed drain current  
Reverse diode dv /dt  
Gate source voltage  
I D=0.23 A, V DS=60 V,  
di /dt =200 A/µs,  
6
kV/µs  
V
T
j,max=150 °C  
±20  
Class 0  
0.36  
ESD sensitivity (HBM) as per  
MIL-STD 883  
P tot  
T A=25 °C  
Power dissipation  
W
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... 150  
55/150/56  
°C  
1) see table on next page and diagram 11  
Rev. 1.32  
page 1  
2006-12-11  

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