RoHS
COMPLIANT
BSS138KJ
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
60V
● ID
0.6A
● RDS(ON)( at VGS=10V)
● RDS(ON)( at VGS=4.5V)
● RDS(ON)( at VGS=2.5V)
● RDS(ON)( at VGS=1.8V)
<1.5Ω
<1.8Ω
<3.7Ω
<8.5Ω
● Gate-Source ESD Rating Up to 2KV (HBM)
General Description
● Trench Power MV MOSFET technology
● Voltage controlled small signal switch
● Low input Capacitance
● Fast Switching Speed
● Moisture Sensitivity Level 1
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
Applications
● Battery operated systems
● Solid-state relays
● Direct logic-level interface:TTL/CMOS
Absolute Maximum Ratings (T =25℃ unless otherwise noted)
■
A
Parameter
Symbol
Limit
Unit
Drain-source Voltage
Gate-source Voltage
VDS
VGS
60
±20
V
V
0.6
TA=25℃
Drain Current
ID
A
A
0.38
1.5
TA=100℃
Pulsed Drain Current A
Total Power Dissipation B
IDM
0.8
TA=25℃
PD
W
℃
0.3
TA=100℃
Junction and Storage Temperature Range
TJ ,TSTG
-55~+150
■Thermal resistance
Parameter
Symbol
Typ
Max
Units
Thermal Resistance Junction-to-Ambient C
Steady-State
RθJA
120
150
℃/W
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY
MODE
PREFERED P/N
Marking
CODE
BSS138KJ
F2
BK
3000
30000
120000
7“ reel
1 / 8
S-E267
Rev.1.1,30-Mar-23
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com