Datasheet > BSS138-G_15

BSS138-G_15

更新时间： 2024-09-26 01:25:51

品牌	Logo	应用领域
上华 - COMCHIP		/
页数	文件大小	规格书
5页	141K
描述
MOSFET

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中文翻译

获取价格

数据手册

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BSS138-G_15 数据手册

MOSFET

BSS138-G

N-Channel 50-V(D-S) MOSFET

RoHS Device

Features

1 : Gate

2 : Source

3 : Drain

SOT-23

-High density cell design for extremely low RDS(ON).

-Rugged and Reliable.

0.118(3.00)

0.110(2.80)

0.055(1.40)

0.047(1.20)

Mechanical data

-Case: SOT-23, molded plastic.

0.079(2.00)

0.071(1.80)

-Terminals: solderable per MIL-STD-750,

method 2026.

0.006(0.15)

0.003(0.08)

0.041(1.05)

0.035(0.90)

0.100(2.55)

0.089(2.25)

Circuit diagram

0.004(0.10) max

0.020(0.50)

0.012(0.30)

Dimensions in inches and (millimeter)

Maximum Ratings (at Ta=25°C unless otherwise noted)

Symbol

Parameter

Value

Units

Drain-source voltage

VDS

VGS

±20

Continuous gate-source voltage

Continuous drain current

Power dissipation

0.22

0.35

Thermal resistance from Junction to ambient

Operating temperature

RΘJA

357

°C/W

°C

150

Storage temperature

TSTG

-55 to +150

Company reserves the right to improve product design , functions and reliability without notice.

REV:A

Page 1

QW-BTR40

Comchip Technology CO., LTD.

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