Datasheet > BSS127

BSS127

更新时间： 2024-06-27 12:14:07

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
6页	217K
描述
Vdss (V) : 600 V;Id @ 25C (A) : 0.021 A;Rds-on (typ) (mOhms) : 310000 mOhms;Total Gate Charge (nQ) typ : 0.07 nQ;Maximum Power Dissipation (W) : 0.5 W;Vgs(th) (typ) : 2.0 V;Input Capacitance (Ciss) : 21 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : SOT-23

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BSS127 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.6	Is Samacsys：	N
Base Number Matches：	1

BSS127 数据手册

BSS127

N-Channel Enhancement Mode Power MOSFET

Description

This new generation uses advanced planar technology MOSFET,

provide excellent high voltage and fast switching, making it ideal for

small-signal and level shift applications.

Features

Schematic diagram

Low Input Capacitance

High BV^DSSRating for Power Application

Low Input/Output Leakage

B127

Application

Motor Control

Marking and pin assignment

DC-DC Converters

Power management

Backlighting

Halogen-free

SOT-23 top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

BSS1±7

SOT-±3

Ø180mm

8 mm

3000 units

B1±7

Absolute Maximum Ratings (T_A=25 unless otherwise noted)

Parameter

Symbol

V^DS

Limit

600

Unit

Drain-Source Voltage

Gate-Source Voltage

±±0

V^GS

T_A=±5

T_A=70

0.0±1

0.017

0.09

I_D

Continuous Drain Current

Drain Current -Pulsed (Note 1)

Maximum Power Dissipation

I_DM

P_D

0.5

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient (Note ±)

±50

±0±0-11/8±/43

REV:B

12 3 4 5 6

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