品牌 | Logo | 应用领域 |
RECTRON | ![]() |
栅 |
页数 | 文件大小 | 规格书 |
6页 | 217K | ![]() |
描述 | ||
Vdss (V) : 600 V;Id @ 25C (A) : 0.021 A;Rds-on (typ) (mOhms) : 310000 mOhms;Total Gate Charge (nQ) typ : 0.07 nQ;Maximum Power Dissipation (W) : 0.5 W;Vgs(th) (typ) : 2.0 V;Input Capacitance (Ciss) : 21 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : SOT-23 |
生命周期: | Active | Reach Compliance Code: | compliant |
风险等级: | 5.6 | Is Samacsys: | N |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSS127_10 | INFINEON |
获取价格 |
SIPMOS Small-Signal-Transistor |
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BSS127G-AE2-R | UTC |
获取价格 |
Small Signal Bipolar Transistor |
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BSS127G-AE3-R | UTC |
获取价格 |
0.021A, 600V SMALL-SIGNAL-TRANSISTOR |
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BSS127H6327 | INFINEON |
获取价格 |
Small Signal Field-Effect Transistor, 0.021A I(D), 600V, 1-Element, N-Channel, Silicon, Me |
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BSS127H6327XTSA2 | INFINEON |
获取价格 |
Small Signal Field-Effect Transistor, 0.021A I(D), 600V, 1-Element, N-Channel, Silicon, Me |
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BSS127I | INFINEON |
获取价格 |
N-沟道增强模式 MOSFET BSS127I 采用 SOT-23-3 封装,其特性为 V |
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BSS127L6327 | INFINEON |
获取价格 |
Small Signal Field-Effect Transistor, 0.021A I(D), 600V, 1-Element, N-Channel, Silicon, Me |
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BSS127L6327HTSA1 | INFINEON |
获取价格 |
Small Signal Field-Effect Transistor, 0.021A I(D), 600V, 1-Element, N-Channel, Silicon, Me |
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BSS127L-AE2-R | UTC |
获取价格 |
Small Signal Bipolar Transistor |
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BSS127L-AE3-R | UTC |
获取价格 |
0.021A, 600V SMALL-SIGNAL-TRANSISTOR |
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