Datasheet > BSS127

BSS127

更新时间： 2024-09-25 18:09:11

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页数	文件大小	规格书
6页	135K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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BSS127 数据手册

SMD Type

MOSFET

Transistors

N-Channel Enhancement MOSFET

BSS127

SOT-23-3

Unit: mm

+0.2

-0.1

2.9

Ƶ Features

ƽ N-Channel

+0.1

-0.1

0.4

ƽ Enhancement mode

ƽ Logic level

ƽ dv/dt rated

+0.02

-0.02

+0.1

-0.1

0.15

0.95

ƽ VDS (V) = 600V

+0.1

-0.2

1.9

ƽ ID = 0.021 A

ƽ RDS(ON) ˘ 500ȍ

1. Gate

2. Source

3. Drain

Ƶ Absolute Maximum Ratings Ta = 25ć, unless otherwise specified

Parameter

Symbol

Rating

600

Unit

Drain-Source Voltage

Gate-Source Voltage

VDS

0.021

0.017

0.09

TA=25ć

TA=70ć

Continuous Drain Current

Pulsed Drain Current

I_D=0.09A,

V_DS=480V,

di/dt=200A/ȝs,

Reverse diode dv/dt

Power Dissipation

dv/dt

kV/ȝs

T_j,max=150ć

tot

0.5

250

Thermal Resistance.Junction- to-minimal footprint

Junction Temperature

RthJA

ć/W

150

Storage Temperature Range

Tstg

-55 to 150

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