型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSS126L6327 | INFINEON |
获取价格 |
Small Signal Field-Effect Transistor, 0.021A I(D), 600V, 1-Element, N-Channel, Silicon, Me |
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BSS127 | INFINEON |
获取价格 |
SIPMOS㈢ Small-Signal-Transistor |
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BSS127 | UTC |
获取价格 |
0.021A, 600V SMALL-SIGNAL-TRANSISTOR |
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BSS127 | BL Galaxy Electrical |
获取价格 |
0.05A, 600V, 0.61W, N Channel, Small Signal MOSFETs |
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BSS127_10 | INFINEON |
获取价格 |
SIPMOS Small-Signal-Transistor |
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BSS127G-AE2-R | UTC |
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Small Signal Bipolar Transistor |
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BSS127G-AE3-R | UTC |
获取价格 |
0.021A, 600V SMALL-SIGNAL-TRANSISTOR |
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BSS127H6327 | INFINEON |
获取价格 |
Small Signal Field-Effect Transistor, 0.021A I(D), 600V, 1-Element, N-Channel, Silicon, Me |
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BSS127H6327XTSA2 | INFINEON |
获取价格 |
Small Signal Field-Effect Transistor, 0.021A I(D), 600V, 1-Element, N-Channel, Silicon, Me |
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BSS127I | INFINEON |
获取价格 |
N-沟道增强模式 MOSFET BSS127I 采用 SOT-23-3 封装,其特性为 V |
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