Datasheet > BSS123

BSS123

更新时间： 2024-11-07 14:55:23

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
6页	315K
描述
SOT-23

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中文翻译

获取价格

数据手册

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BSS123 数据手册

PBSS123

100V N-Channel Enhancement Mode MOSFET – ESD Protected

SOT-23

Unit: inch(mm)

100 V

170 mA

Voltage

Current

Features

 RDS(ON) , VGS@10V, ID@170mA<6Ω

 RDS(ON) , VGS@4.5V, ID@130mA<10Ω

 Advanced Trench Process Technology

 Specially Designed for Switch Load, PWM Application, etc

 ESD Protected 2KV HBM

 Lead free in compliance with EU RoHS 2.0

 Green molding compound as per IEC 61249 standard

Mechanical Data

 Case: SOT-23 Package

 Terminals: Solderable per MIL-STD-750, Method 2026

TOP VIEW

FIG.183

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNITS

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

I_D

100

+20

Continuous Drain Current

Pulsed Drain Current ^{(Note 4)}

170

I_DM

680

T_a=25^oC

Derate above 25^oC

500

mW/ ^oC

^oC

Power Dissipation

P_D

Operating Junction and Storage Temperature Range

Typical Thermal Resistance

T_J,T_STG

-55~150

Junction to Ambient ^{(Note 3)}

^oC/W

R_θJA

250

July 25,2019-REV.01

Page 1

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中文翻译

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