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BSS123 PDF预览

BSS123

更新时间: 2024-11-07 14:55:07
品牌 Logo 应用领域
江苏长电/长晶 - CJ 开关光电二极管晶体管
页数 文件大小 规格书
5页 734K
描述
SOT-23

BSS123 数据手册

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD  
SOT-23 Plastic-Encapsulate MOSFETS  
BSS123 N Channel MOSFET  
SOT-23  
ID  
V(BR)DSS  
RDS(on)MAX  
3
@
Ω
10V  
6
V
100  
0.17  
A
@
Ω
4.5V  
10  
1. GATE  
1
2. SOURCE  
2
3. DRAIN  
APPLICATION  
FEATURE  
Small Servo Motor Controls  
Power MOSFET Gate Drivers  
Surface Mount Package  
High Density Cell Design for Extremely Low RDS(ON)  
Voltage Controlled Small Signal Switch  
Rugged and Reliable  
Switching Application  
MARKING  
Equivalent Circuit  
B123  
Front side  
B123= Device code  
Solid dot = Green molding compound device.  
ABSOLUTE MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
Parameter  
Value  
Unit  
N-MOSFET  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
ID  
100  
±20  
V
V
Continuous Drain Current (note 1)  
0.17  
0.68  
0.17  
0.35  
357  
A
Pulsed Drain Current (tp=10us)  
IDM  
A
Continous Source-Drain Diode Current  
Power Dissipation  
IS  
A
PD  
W
Thermal Resistance from Junction to Ambient (note 1)  
Operation Junction and Storage Temperature Range  
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)  
RθJA  
TJ,TSTG  
TL  
/W  
-55~+150  
260  
www.jscj-elec.com  
1
Rev. - 2.1  

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