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BSS100E6325 PDF预览

BSS100E6325

更新时间: 2024-11-19 20:04:11
品牌 Logo 应用领域
英飞凌 - INFINEON 开关晶体管
页数 文件大小 规格书
7页 89K
描述
Small Signal Field-Effect Transistor, 0.22A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3 PIN

BSS100E6325 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.08
其他特性:LOGIC LEVEL COMPATIBLE配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (ID):0.22 A
最大漏源导通电阻:10 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):6 pFJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BSS100E6325 数据手册

 浏览型号BSS100E6325的Datasheet PDF文件第2页浏览型号BSS100E6325的Datasheet PDF文件第3页浏览型号BSS100E6325的Datasheet PDF文件第4页浏览型号BSS100E6325的Datasheet PDF文件第5页浏览型号BSS100E6325的Datasheet PDF文件第6页浏览型号BSS100E6325的Datasheet PDF文件第7页 
BSS 100  
®
SIPMOS Small-Signal Transistor  
• N channel  
• Enhancement mode  
• Logic Level  
• V  
= 0.8...2.0V  
GS(th)  
Pin 1  
S
Pin 2  
G
Pin 3  
D
Type  
Package  
Marking  
VDS  
100 V  
ID  
RDS(on)  
BSS 100  
0.22 A  
6
TO-92  
SS 100  
Type  
Ordering Code  
Q62702-S499  
Q62702-S007  
Q62702-S206  
Tape and Reel Information  
BSS 100  
BSS 100  
BSS 100  
E6288  
E6296  
E6325  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Drain source voltage  
Drain-gate voltage  
V
100  
V
DS  
V
DGR  
R
= 20 k  
100  
GS  
±
20  
Gate source voltage  
V
GS  
ESD Sensitivity (HBM) as per MIL-STD 883  
Continuous drain current  
Class 1  
I
A
D
T = 33 ˚C  
0.22  
A
DC drain current, pulsed  
I
Dpuls  
T = 25 ˚C  
0.9  
A
Power dissipation  
P
W
tot  
T = 25 ˚C  
0.63  
A
Data Sheet  
1
05.99  

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