BSR43Q

更新时间： 2024-11-20 13:45:39

品牌	Logo	应用领域
美台 - DIODES		小信号双极晶体管
页数	文件大小	规格书
1页	47K
描述
NPN, 80V, 1A, SOT89

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数据手册

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BSR43Q 数据手册

SOT89 NPN SILICON PLANAR

MEDIUM POWER TRANSISTOR

BSR43

ISSUE 4 – MARCH 2001

✪

COMPLEMENTARY TYPES – BSR33

PARTMARKING DETAIL –

AR4

SOT89

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Base Current

I_C

I_B

100

°C

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

P_TOT

T_j:T_stg

-65 to +150

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER

SYMBOL MIN.

MAX. UNIT

CONDITIONS.

Collector-Base

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C=100µA

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

I_C=10mA

I_E=10µA

V_CB=60V

Emitter-Base Breakdown

Voltage

Collector Cut-Off Current

100

µA

_CB=60V, Tamb =125°C

Collector-Emitter

V_CE(sat)

V_BE(sat)

h_FE

0.25

0.5

I_C=150mA, I_B=15mA

Saturation Voltage

I_C=500mA, I_B=50mA

Base-Emitter

Saturation Voltage

1.0

1.2

I_C=150mA, I_B=15mA

_C=500mA, I_B=50mA

Static Forward

Current Transfer Ratio

100

_C=100µA, V_CE=5V

_C=100mA, V_CE=5V

_C=500mA, V_CE=5V

300

Output Capacitance

Input Capacitance

Transition Frequency

C_obo

C_ibo

f_T

V_CB=10V, f=1MHz

V_EB=0.5V, f=1MHz

100

MHz

I_C=50mA, V_CE=10V

f =35MHz

Turn-On Time

Turn-Off Time

T_on

T_off

250

V_CC=20V, I_C=100mA

_B1=I_B2=5mA

1000

*Measured under pulsed conditions.

For typical characteristics graphs see FMMT493 datasheet.

TBA

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