Datasheet > BSR43

BSR43

更新时间： 2024-11-20 14:54:59

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
3页	1590K
描述
SOT-89-3L

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中文翻译

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技术参数
数据手册

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BSR43 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.56
Is Samacsys：	N	Base Number Matches：	1

BSR43 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

SOT-89-3L

BSR43

TRANSISTOR (NPN)

FEATURES

1. BASE

Low Voltage

High Current

Complement to BSR33

2. COLLECTOR

3. EMITTER

AAPLICATIONS

Thick and Thin-Film Circuits

Telephony and General Industrial Applications

MARKING:AR4

Solid dot = Green molding compound device.

AR4

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

P_C

Collector Power Dissipation

500

℃/W

℃

R_θJA

T_J,T_stg

Thermal Resistance From Junction To Ambient

Operation Junction and Storage Temperature Range

250

-55~+150

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=100µA,I_E=0

V_(BR)CEOI_C=1mA,I_B=0

V_(BR)EBOI_E=100µA,I_C=0

I_CBO

I_EBO

V_CB=60V,I_E=0

100

Emitter cut-off current

V_EB=5V,I_C=0

h_FE(1)

h_FE(2)

h_FE(3)

V_CE=5V, I_C=0.1mA

V_CE=5V, I_C=100mA

V_CE=5V, I_C=500mA

I_C=150mA,I_B=15mA

I_C=500mA,I_B=50mA

I_C=150mA,I_B=15mA

I_C=500mA,I_B=50mA

V^CE=10V,I^C=50mA, f=100MHz

V_CB=10V, I_E=0, f=1MHz

V_BE=0.5V, I_C=0, f=1MHz

100

DC current gain

300

0.25

0.5

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

1.2

f_T

100

MHz

Transition frequency

Collector output capacitance

C_ob

C_ib

Emitter input capacitance

*Pulse test

www.jscj-elec.com

Rev. - 2.2

12 3

中文翻译

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