Datasheet > BSR43

BSR43

更新时间： 2024-11-19 09:00:35

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管
页数	文件大小	规格书
1页	289K
描述
TRANSISTOR (NPN)

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中文翻译

获取价格

数据手册

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BSR43 数据手册

BRS43

TRANSISTOR (NPN)

SOT-89-3L

FEATURES

Low Voltage

1. BASE

High Current

Complement to BSR33

2. COLLECTOR

3. EMITTER

AAPLICATIONS

Thick and Thin-Film Circuits

Telephony and General Industrial Applications

MARKING:AR4

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

P_C

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

500

250

150

-55~+150

℃/W

℃

R_θJA

T_j

T_stg

Storage Temperature

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=100µA,I_E=0

V_(BR)CEOI_C=1mA,I_B=0

V_(BR)EBOI_E=100µA,I_C=0

I_CBO

I_EBO

V_CB=60V,I_E=0

100

Emitter cut-off current

V_EB=5V,I_C=0

h_FE(1)

h_FE(2)

h_FE(3)

V_CE=5V, I_C=0.1mA

V_CE=5V, I_C=100mA

V_CE=5V, I_C=500mA

I_C=150mA,I_B=15mA

I_C=500mA,I_B=50mA

I_C=150mA,I_B=15mA

I_C=500mA,I_B=50mA

V^CE=10V,I^C=50mA, f=100MHz

V_CB=10V, I_E=0, f=1MHz

V_BE=0.5V, I_C=0, f=1MHz

100

DC current gain

300

0.25

0.5

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

1.2

f_T

100

MHz

Transition frequency

Collector output capacitance

C_ob

C_ib

Emitter input capacitance

*Pulse test

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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