Datasheet > BSR42

BSR42

更新时间： 2024-11-22 22:39:39

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描述
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

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数据手册

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BSR42 数据手册

SOT89 NPN SILICON PLANAR

MEDIUM POWER TRANSISTOR

BSR42

ISSUE 3 – FEBRUARY 1996

✪

COMPLEMENTARY TYPE –

BSR32

AR3

PARTMARKING DETAIL –

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Base Current

I_C

I_B

100

°C

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

P_tot

T_j:T_stg

-65 to +150

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER

SYMBOL MIN.

MAX.

UNIT

CONDITIONS.

Collector-Base

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C=100µA

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

I_C=10mA

I_E=10µA

V_CB=60V

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

100

µA

_CB=60V, T_amb=125°C

Collector-Emitter

V_CE(sat)

V_BE(sat)

h_FE

0.25

0.5

I_C=150mA, I_B=15mA

Saturation Voltage

I_C=500mA, I_B=50mA

Base-Emitter

Saturation Voltage

1.0

1.2

I_C=150mA, I_B=15mA

_C=500mA, I_B=50mA

Static Forward

Current Transfer Ratio

_C=100µA, V_CE=5V

_C=100mA, V_CE=5V

_C=500mA, V_CE=5V

120

Output Capacitance

Input Capacitance

Transition Frequency

C_obo

C_ibo

f_T

V_CB=10V, f =1MHz

V_EB=0.5V, f=1MHz

100

MHz

I_C=50mA, V_CE=10V

f =35MHz

Turn-On Time

Turn-Off Time

T_on

T_off

250

V_CC=20V, I_C=100mA

_B1=-I_B2=-5mA

1000

*Measured under pulsed conditions.

For typical characteristics graphs see FMMT493 datasheet.

TBA

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