Datasheet > BSR40

BSR40

更新时间： 2024-11-29 03:22:55

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捷特科 - ZETEX		晶体晶体管放大器局域网
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1页	17K
描述
SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

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BSR40 数据手册

SOT89 NPN SILICON PLANAR

MEDIUM POWER TRANSISTORS

BSR40

BSR42

ISSUE 3 – FEBRUARY 1996

✪

COMPLEMENTARY TYPES – BSR40 – BSR30

BSR42 – BSR32

PARTMARKING DETAIL –

BSR40 – AR1

BSR42 – AR3

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

BSR40

BSR42

UNIT

Collector-Base Voltage

Collector-Em itter Voltage

Em itter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Base Current

I_C

I_B

100

m A

Power Dissipation at T_{am b}=25°C

Operating and Storage Tem perature Range

ELECTRICAL CHARACTERISTICS (at T

P_tot

T_j:T_stg

-65 to +150

°C

= 25°C unless otherw ise stated).

am b

PARAMETER

SYMBOL MIN.

MAX.

UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage BSR42

BSR40 V_(BR)CBO

I_C=100µA

Collector-Em itter

Breakdown Voltage BSR42

BSR40 V_(BR)CEO

I_C=10m A

Em itter-Base

Breakdown Voltage

V_(BR)EBO

I_CBO

I_E=10µA

Collector Cut-Off

Current

100

µA

V_CB=60V

_CB=60V, T_{am b}=125°C

I_C=150m A, I_B=15m A

_C=500m A, I_B=50m A

I_C=150m A, I_B=15m A

_C=500m A, I_B=50m A

I_C=100µA, V_CE=5V

_C=100m A, V_CE=5V

_C=500m A, V_CE=5V

Collector-Em itter

Saturation Voltage

V_CE(sat)

V_BE(sat)

h_FE

0.25

0.5

Base-Em itter

Saturation Voltage

1.0

1.2

Static Forward

Current Transfer Ratio

120

Collector Capacitance

Em itter Capacitence

Transition Frequency

C_c

C_e

f_T

V_CB=10V, f =1MHz

V_EB=0.5V, f=1MHz

100

MHz

I_C=50m A, V_CE=10V

f =35MHz

Turn-On Tim e

Turn-Off Tim e

T_on

T_off

250

V_CC=20V, I_C=100m A

I_B1=-I_B2=-5m A

1000

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

For typical characteristics graphs see FMMT493 datasheet.

3 - 67

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