Datasheet > BSP41

BSP41

更新时间： 2024-11-24 03:22:55

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捷特科 - ZETEX		晶体晶体管开关光电二极管局域网
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描述
SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

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BSP41 数据手册

SOT223 NPN SILICON PLANAR

MEDIUM POWER TRANSISTORS

BSP41

BSP43

ISSUE 3 NOVEMBER 1995

✪

COMPLEMENTARY TYPES

BSP43 - BSP33

BSP41 - BSP31

PARTMARKING DETAIL

DEVICE TYPE IN FULL

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

BSP41

BSP43

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Base Current

I_C

I_B

100

°C

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

ELECTRICAL CHARACTERISTICS (at T

P_TOT

T_j:T_stg

-55 to +150

= 25°C unless otherwise stated).

amb

PARAMETER

SYMBOL MIN.

MAX. UNIT

CONDITIONS.

Collector-Base BSP43

Breakdown Voltage BSP41

V_(BR)CBO

I_C=100µA

Collector-Emitter BSP43

V_(BR)CEO

I_C=10mA *

Breakdown Voltage BSP41

Emitter-Base Breakdown Voltage V_(BR)EBO

I_E=10µA

Collector Cut-Off Current

I_CBO

100

µA

V_CB=60V

V_CB=60V, Tamb =125°C

Collector-Emitter

Saturation Voltage

V_CE(sat)

V_BE(sat)

h_FE

0.25

0.5

I_C=150mA, I_B=15mA

I_C=500mA, I_B=50mA

Base-Emitter

Saturation Voltage

1.0

1.2

I_C=150mA, I_B=15mA

I_C=500mA, I_B=50mA

Static Forward

Current Transfer Ratio

100

I_C=100µA, V_CE=5V

I_C=100mA, V_CE=5V

I_C=500mA, V_CE=5V

300

Collector Capacitance

Emitter Capacitance

Transition Frequency

C_c

C_e

f_T

V_CB=10V, f=1MHz

V_EB=0.5V, f=1MHz

100

MHz

I_C=50mA, V_CE=10V

f =35MHz

Turn-On Time

Turn-Off Time

T_on

T_off

250

V_CC=20V, I_C=100mA

I_B1=I_B2=5mA

1000

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

For typical characteristics graphs see FMMT493 datasheet.

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