是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G4 | 针数: | 4 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
Factory Lead Time: | 10 weeks | 风险等级: | 1.58 |
其他特性: | AVALANCHE RATED | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (ID): | 1.8 A | 最大漏源导通电阻: | 0.23 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最大反馈电容 (Crss): | 28 pF |
JESD-30 代码: | R-PDSO-G4 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 4 | 工作模式: | ENHANCEMENT MODE |
最低工作温度: | -55 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
参考标准: | AEC-Q101 | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
BSP373 | INFINEON | SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated) |
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BSP373_07 | INFINEON | SIPMOS Small-Signal Transistor |
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BSP373E6327 | INFINEON | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Met |
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BSP373E6327 | ROCHESTER | 1.7A, 100V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET |
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BSP373L6327 | INFINEON | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Met |
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BSP373L6327HTSA1 | INFINEON | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Met |
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