5秒后页面跳转
BSP372NH6327XTSA1 PDF预览

BSP372NH6327XTSA1

更新时间: 2024-02-24 08:02:46
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网光电二极管晶体管
页数 文件大小 规格书
9页 549K
描述
Small Signal Field-Effect Transistor, 1.8A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4

BSP372NH6327XTSA1 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G4针数:4
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:10 weeks风险等级:1.58
其他特性:AVALANCHE RATED外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (ID):1.8 A最大漏源导通电阻:0.23 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):28 pF
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
参考标准:AEC-Q101表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

BSP372NH6327XTSA1 数据手册

 浏览型号BSP372NH6327XTSA1的Datasheet PDF文件第2页浏览型号BSP372NH6327XTSA1的Datasheet PDF文件第3页浏览型号BSP372NH6327XTSA1的Datasheet PDF文件第4页浏览型号BSP372NH6327XTSA1的Datasheet PDF文件第5页浏览型号BSP372NH6327XTSA1的Datasheet PDF文件第6页浏览型号BSP372NH6327XTSA1的Datasheet PDF文件第7页 
BSP372N  
OptiMOSSmall-Signal-Transistor  
Features  
Product Summary  
VDS  
100  
0.23  
0.27  
1.8  
V
• N-channel  
RDS(on),max  
VGS=10 V  
VGS=4.5 V  
W
• Enhancement mode  
• Logic Level (4.5V rated)  
ID  
A
• Avalanche rated  
• Qualified according to AEC Q101  
• 100% lead-free; RoHS compliant  
• Halogen-free according to IEC61249-2-21  
PG-SOT223  
Type  
Package  
SOT223  
Tape and Reel  
Marking  
Halogen-Free  
Yes  
Packing  
Non dry  
BSP372N  
BSP372N  
H6327: 1000 pcs/ reel  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
T A=25 °C  
T A=70 °C  
T A=25 °C  
Continuous drain current  
1.8  
1.5  
7.2  
A
I D,pulse  
Pulsed drain current  
E AS  
I D=1.8 A, R GS=25 W  
Avalanche energy, single pulse  
33  
6
mJ  
I D=1.8 A, V DS=80 V,  
di /dt =200 A/µs,  
T j,max=150 °C  
Reverse diode dv /dt  
dv /dt  
kV/µs  
V GS  
Gate source voltage  
±20  
V
Power dissipation1)  
P tot  
T A=25 °C  
1.8  
W
°C  
T j, T stg  
Operating and storage temperature  
ESD Class  
-55 ... 150  
0 (<250V)  
260 °C  
JESD22-A114 -HBM  
Soldering Temperature  
IEC climatic category; DIN IEC 68-1  
55/150/56  
Rev 2.0  
page 1  
2013-04-03  

与BSP372NH6327XTSA1相关器件

型号 品牌 描述 获取价格 数据表
BSP373 INFINEON SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated)

获取价格

BSP373_07 INFINEON SIPMOS Small-Signal Transistor

获取价格

BSP373E6327 INFINEON Power Field-Effect Transistor, 1.7A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Met

获取价格

BSP373E6327 ROCHESTER 1.7A, 100V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET

获取价格

BSP373L6327 INFINEON Power Field-Effect Transistor, 1.7A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Met

获取价格

BSP373L6327HTSA1 INFINEON Power Field-Effect Transistor, 1.7A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Met

获取价格