Datasheet > BSP230 (KSP230)

BSP230 (KSP230)

更新时间： 2024-11-25 18:09:39

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
4页	1052K
描述
P-Channel MOSFET

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中文翻译

获取价格

数据手册

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BSP230 (KSP230) 数据手册

SMD Type

MOSFET

P-Channel MOSFET

BSP230 (KSP230)

Unit:mm

SOT-223

6.50±0.2

3.00±0.1

■ Features

● V^{DS (V)}=-300V

● ID =-0.21 A (VGS =-10V)

● R^DS(ON)＜ 17Ω (VGS =-10V)

● High-speed switching

0.250

2.30 (typ)

Gauge Plane

1.Gate

2.Drain

3.Source

4.Drain

0.70±0.1

4.60 (typ)

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

Rating

-300

Unit

Gate-Source Voltage

±20

Continuous Drain Current

Pulsed Drain Current

-0.21

-0.75

1.5

Power Dissipation

Thermal Resistance.Junction- to-Ambient

Junction Temperature

thJA

83.3

℃/W

150

℃

Junction Storage Temperature Range

stg

-65 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage

Symbol

Test Conditions

Min

Typ

Max

Unit

DSS

-300

=-250μA, V^GS=0V

DS=-240V, VGS=0V

^DS=0V, V^GS=±20V

DSS

GSS

-100

±100

-2.55

GS(th)

DS(O

iss

oss

rss

^DS=V^GS

^GS=-10V, I

DS=-25V, I

=-1mA

-1.7

100

Static Drain-Source On-Resistance

Forward Transconductance

Input Capacitance

=-170mA

GS=0V, VDS=-25V, f=1MHz

Output Capacitance

Reverse Transfer Capacitance

Turn-On DelayTime

d(on)

d(off)

GS=0 to -10V, VDS=-50 V, I

=-250mA

Turn-Off DelayTime

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