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BSP16

更新时间： 2024-11-05 22:27:55

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描述
PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

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BSP16 数据手册

SOT223 PNP SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

ISSUE 3 AUGUST 1995

BSP16

FEATURES

High V_CEO

Low saturation voltage

COMPLEMENTARY TYPE: BSP19

PARTMARKING DETAIL: BSP16

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

-350

-300

-6

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

-1

Continuous Collector Current

Power Dissipation at T_amb=25°C

I_C

-0.5

P_tot

°C

Operating and Storage Temperature

Range

T_j:T_stg

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER

SYMBOL MIN.

MAX.

UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

V_(BR)CBO

-350

-300

-5

I_C=-100µA

Collector-Emitter

Breakdown Voltage

V_(BR)CEO

I_C=-10mA

I_E=-100µA

V_CB=-280V

Emitter-Base Breakdown V_(BR)EBO

Voltage

Collector Cut-Off

Current

I_CBO

-1

µA

Emitter Cut-Off Current

I_EBO

-20

V_EB=-6V

Collector-Emitter

Saturation Voltage

V_CE(sat)

- 2.0

-0.5

I_C=-50mA, I_B=-5mA*

I_C=-30mA, I_B=-3mA*

Static Forward Current

Transfer Ratio

h_FE

120

I_C=-50mA, V_CE=-10V*

Transition Frequency

f_T

MHz

I_C=-10mA, V_CE=-10V*

f = 30MHz

Output Capacitance

C_obo

V_CB=-10V, f=1MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

For typical characteristics graphs see FMMTA92 datasheet.

3 - 59

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