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BSD22TRL PDF预览

BSD22TRL

更新时间: 2024-11-20 20:02:39
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
3页 85K
描述
TRANSISTOR 50 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal

BSD22TRL 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.74外壳连接:SUBSTRATE
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (ID):0.05 A最大漏源导通电阻:50 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G4
元件数量:1端子数量:4
工作模式:DEPLETION MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BSD22TRL 数据手册

 浏览型号BSD22TRL的Datasheet PDF文件第2页浏览型号BSD22TRL的Datasheet PDF文件第3页 

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