是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PDSO-G6 | 针数: | 6 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.31 |
Is Samacsys: | N | 其他特性: | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 最小漏源击穿电压: | 20 V |
最大漏极电流 (Abs) (ID): | 0.39 A | 最大漏极电流 (ID): | 0.39 A |
最大漏源导通电阻: | 1.2 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 22 pF | JESD-30 代码: | R-PDSO-G6 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 2 | 端子数量: | 6 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 0.25 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | MATTE TIN |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 40 | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSD22T/R | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 50MA I(D) | SOT-143 | |
BSD22-TAPE-13 | NXP |
获取价格 |
TRANSISTOR 50 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Sig | |
BSD22-TAPE-7 | NXP |
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TRANSISTOR 50 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Sig | |
BSD22TRL | NXP |
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TRANSISTOR 50 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Sig | |
BSD22TRL13 | YAGEO |
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Small Signal Field-Effect Transistor, 0.05A I(D), 20V, 1-Element, N-Channel, Silicon, Meta | |
BSD235C | INFINEON |
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OptiMOS™ 2 + OptiMOS™-P 2 Small Signal Transi | |
BSD235N | INFINEON |
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OptiMOS™2 Small-Signal-Transistor | |
BSD235NH6327 | INFINEON |
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Small Signal Field-Effect Transistor, 0.95A I(D), 20V, 2-Element, N-Channel, Silicon, Meta | |
BSD235NH6327XTSA1 | INFINEON |
获取价格 |
Small Signal Field-Effect Transistor, 0.95A I(D), 20V, 2-Element, N-Channel, Silicon, Meta | |
BSD235NL6327 | INFINEON |
获取价格 |
Small Signal Field-Effect Transistor, 0.95A I(D), 20V, 2-Element, N-Channel, Silicon, Meta |