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BSD223P PDF预览

BSD223P

更新时间: 2024-11-18 18:09:31
品牌 Logo 应用领域
合科泰 - HOTTECH /
页数 文件大小 规格书
9页 804K
描述
SOT-363

BSD223P 数据手册

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BSD223P  
Dual P-Channel MOSFET  
Product Summary  
SOT-363  
V
-20  
1.2  
V
A
DS  
4
5
6
R
DS(on)  
I
-0.39  
D
3
2
1
Feature  
Dual P-Channel  
MOSFET1: 1,2,6  
MOSFET2: 3,4,5  
Enhancement mode  
Super Logic Level (2.5 V rated)  
150°C operating temperature  
Avalanche rated  
Drain  
pin 6,3  
Source  
pin 1,4  
Gate  
pin 2,5  
dv/dt rated  
Maximum Ratings, at T = 25 °C, unless otherwise specified  
j
Parameter  
Symbol  
Value  
Unit  
A
Continuous drain current  
I
D
T =25°C  
-0.39  
-0.31  
-1.56  
A
T =70°C  
A
Pulsed drain current  
I
D puls  
T =25°C  
A
1.4  
-6  
mJ  
Avalanche energy, single pulse  
E
AS  
I =-0.39 A , V =-10V, R =25  
D
DD  
GS  
kV/µs  
Reverse diode dv/dt  
dv/dt  
I =-0.39A, V =-16V, di/dt=200A/µs, T  
DS jmax  
=150°C  
S
V
Gate source voltage  
Power dissipation  
V
P
±12  
GS  
tot  
0.25  
W
T =25°C  
A
°C  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
T , T  
-55... +150  
55/150/56  
j
stg  
9
1 /  
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD  
E-mail:hkt@heketai.com  

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