Datasheet > BSD223P

BSD223P

更新时间： 2024-10-15 18:09:31

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
9页	804K
描述
SOT-363

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数据手册

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BSD223P 数据手册

BSD223P

Dual P-Channel MOSFET

Product Summary

SOT-363

-20

1.2

Ω

DS(on)

-0.39

Feature

• Dual P-Channel

MOSFET1: 1,2,6

MOSFET2: 3,4,5

• Enhancement mode

• Super Logic Level (2.5 V rated)

• 150°C operating temperature

• Avalanche rated

Drain

pin 6,3

Source

pin 1,4

Gate

pin 2,5

• dv/dt rated

Maximum Ratings, at T = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Continuous drain current

T =25°C

-0.39

-0.31

-1.56

T =70°C

Pulsed drain current

D puls

T =25°C

1.4

-6

Avalanche energy, single pulse

I =-0.39 A , V =-10V, R =25Ω

kV/µs

Reverse diode dv/dt

dv/dt

I =-0.39A, V =-16V, di/dt=200A/µs, T

DS jmax

=150°C

Gate source voltage

Power dissipation

±12

tot

0.25

T =25°C

°C

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

T , T

-55... +150

55/150/56

stg

1 /

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