型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSC150N03LDG | INFINEON |
获取价格 |
OptiMOS™3 Power-Transistors | |
BSC150N03LDGATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 8A I(D), 30V, 0.022ohm, 2-Element, N-Channel, Silicon, Meta | |
BSC152N10NSFG | INFINEON |
获取价格 |
OptiMOS™2 Power-Transistor | |
BSC152N10NSFGATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 9.4A I(D), 100V, 0.0152ohm, 1-Element, N-Channel, Silicon, | |
BSC152N15LS5 | INFINEON |
获取价格 |
The OptiMOS? 5 Logic-Level power MOSFET 150 V family offers the same excellent performance | |
BSC155N06ND | INFINEON |
获取价格 |
OptiMOS™ 60V power MOSFET | |
BSC159N10LSFG | INFINEON |
获取价格 |
OptiMOS?2 Power-Transistor | |
BSC159N10LSFGATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 9.4A I(D), 100V, 0.0159ohm, 1-Element, N-Channel, Silicon, | |
BSC160N10NS3 G | INFINEON |
获取价格 |
英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SM | |
BSC160N10NS3G | INFINEON |
获取价格 |
OptiMOS3 Power-Transistor |