型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSC090N03LSG | INFINEON |
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OptiMOS™3 Power-MOSFET | |
BSC090N03MSG | INFINEON |
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OptiMOS™3 M-Series Power-MOSFET | |
BSC090N03MSGATMA1 | INFINEON |
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Power Field-Effect Transistor, 12A I(D), 30V, 0.0112ohm, 1-Element, N-Channel, Silicon, Me | |
BSC0910NDI | INFINEON |
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Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
BSC0910NDIATMA1 | INFINEON |
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Small Signal Field-Effect Transistor, 11A I(D), 25V, 2-Element, N-Channel, Silicon, Metal- | |
BSC0911ND | INFINEON |
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英飞凌凭借 OptiMOS™ 25V 产品系列,为分立功率 MOSFET 和封装系统树立功 | |
BSC0911NDATMA1 | INFINEON |
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Small Signal Field-Effect Transistor, 2.2A I(D), 25V, 2-Element, N-Channel, Silicon, Metal | |
BSC091N03MSCG | INFINEON |
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Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Me | |
BSC091N03MSCGATMA1 | INFINEON |
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Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Me | |
BSC0921NDI | INFINEON |
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Small Signal Field-Effect Transistor |