生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-F5 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.84 | 雪崩能效等级(Eas): | 25 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (ID): | 16 A |
最大漏源导通电阻: | 0.0064 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-F5 | 元件数量: | 1 |
端子数量: | 5 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 308 A | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSC0500NSI | INFINEON |
获取价格 |
Metal Oxide Semiconductor Field Effect Transistor | |
BSC0500NSI_15 | INFINEON |
获取价格 |
Metal Oxide Semiconductor Field Effect Transistor | |
BSC0500NSIATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 35A I(D), 30V, 0.0017ohm, 1-Element, N-Channel, Silicon, Me | |
BSC0501NSI | INFINEON |
获取价格 |
Metal Oxide Semiconductor Field Effect Transistor | |
BSC0501NSI_15 | INFINEON |
获取价格 |
Metal Oxide Semiconductor Field Effect Transistor | |
BSC0501NSIATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 29A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Me | |
BSC0502NSI | INFINEON |
获取价格 |
Metal Oxide Semiconductor Field Effect Transistor | |
BSC0502NSI_15 | INFINEON |
获取价格 |
Metal Oxide Semiconductor Field Effect Transistor | |
BSC0502NSIATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 26A I(D), 30V, 0.0028ohm, 1-Element, N-Channel, Silicon, Me | |
BSC0503NSI | INFINEON |
获取价格 |
Metal Oxide Semiconductor Field Effect Transistor |