是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | FBGA, BGA48,6X8,30 | Reach Compliance Code: | unknown |
风险等级: | 5.92 | 最长访问时间: | 70 ns |
I/O 类型: | COMMON | JESD-30 代码: | R-PBGA-B48 |
JESD-609代码: | e0 | 内存密度: | 2097152 bit |
内存集成电路类型: | STANDARD SRAM | 内存宽度: | 16 |
湿度敏感等级: | 3 | 端子数量: | 48 |
字数: | 131072 words | 字数代码: | 128000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 128KX16 |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | FBGA | 封装等效代码: | BGA48,6X8,30 |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, FINE PITCH |
并行/串行: | PARALLEL | 电源: | 5 V |
认证状态: | Not Qualified | 最大待机电流: | 7e-7 A |
最小待机电流: | 1.5 V | 子类别: | SRAMs |
最大压摆率: | 0.055 mA | 标称供电电压 (Vsup): | 5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | BALL | 端子节距: | 0.75 mm |
端子位置: | BOTTOM | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BS616LV2017AI-70 | BSI |
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Very Low Power/Voltage CMOS SRAM 128K X 16 bit | |
BS616LV2017AIG55 | BSI |
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Very Low Power/Voltage CMOS SRAM 128K X 16 bit | |
BS616LV2017AIG70 | BSI |
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Very Low Power/Voltage CMOS SRAM 128K X 16 bit | |
BS616LV2017AIP55 | BSI |
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Very Low Power/Voltage CMOS SRAM 128K X 16 bit | |
BS616LV2017AIP70 | BSI |
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Very Low Power/Voltage CMOS SRAM 128K X 16 bit | |
BS616LV2017DC | BSI |
获取价格 |
Very Low Power/Voltage CMOS SRAM 128K X 16 bit | |
BS616LV2017DC-55 | BSI |
获取价格 |
Very Low Power/Voltage CMOS SRAM 128K X 16 bit | |
BS616LV2017DC-70 | BSI |
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Very Low Power/Voltage CMOS SRAM 128K X 16 bit | |
BS616LV2017DCG55 | BSI |
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Very Low Power/Voltage CMOS SRAM 128K X 16 bit | |
BS616LV2017DCG70 | BSI |
获取价格 |
Very Low Power/Voltage CMOS SRAM 128K X 16 bit |