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BS616LV1010ECG75 PDF预览

BS616LV1010ECG75

更新时间： 2024-11-26 07:15:27
品牌 Logo 应用领域
BSI 静态存储器
页数 文件大小 规格书
11页 241K
描述
Very Low Power CMOS SRAM 64K X 16 bit

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BS616LV1010ECG75 数据手册

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Very Low Power CMOS SRAM  
64K X 16 bit  
BS616LV1010  
Pb-Free and Green package materials are compliant to RoHS  
„ FEATURES  
„ DESCRIPTION  
y Wide VCC operation voltage : 2.4V ~ 5.5V  
y Very low power consumption :  
The BS616LV1010 is a high performance, very low power CMOS  
Static Random Access Memory organized as 65,536 by 16 bits and  
operates form a wide range of 2.4V to 5.5V supply voltage.  
Advanced CMOS technology and circuit techniques provide both  
high speed and low power features with maximum CMOS standby  
current of 1.5/5uA at Vcc=3/5V at 85OC and maximum access time  
of 55/70ns.  
VCC = 3.0V  
Operation current : 25mA (Max.) at 55ns  
2mA (Max.) at 1MHz  
Standby current : 0.5/1.5uA (Max.) at 70/85OC  
Operation current : 45mA (Max.) at 55ns  
5mA (Max.) at 1MHz  
VCC = 5.0V  
Standby current : 3/5uA (Max.) at 70/85OC  
y High speed access time :  
Easy memory expansion is provided by an active LOW chip enable  
(CE) and active LOW output enable (OE) and three-state output  
drivers.  
The BS616LV1010 has an automatic power down feature, reducing  
the power consumption significantly when chip is deselected.  
The BS616LV1010 is available in DICE form, JEDEC standard  
44-pin TSOP II and 48-ball BGA package.  
-55  
-70  
55ns(Max.) at VCC=2.7~5.5V  
70ns(Max.) at VCC=2.4~5.5V  
y Automatic power down when chip is deselected  
y Easy expansion with CE and OE options  
y I/O Configuration x8/x16 selectable by LB and UB pin.  
y Three state outputs and TTL compatible  
y Fully static operation  
y Data retention supply voltage as low as 1.5V  
„ POWER CONSUMPTION  
POWER DISSIPATION  
Operating  
STANDBY  
PRODUCT  
FAMILY  
OPERATING  
PKG TYPE  
(ICCSB1, Max)  
(ICC, Max)  
TEMPERATURE  
VCC=5.0V  
10MHz  
VCC=3.0V  
10MHz  
VCC=5.0V VCC=3.0V  
1MHz  
4mA  
fMax.  
1MHz  
fMax.  
BS616LV1010DC  
BS616LV1010AC  
BS616LV1010EC  
BS616LV1010AI  
BS616LV1010EI  
DICE  
Commercial  
3.0uA  
5.0uA  
0.5uA  
1.5uA  
24mA  
25mA  
44mA  
1.5mA  
14mA  
15mA  
24mA  
BGA-48-0608  
TSOP II-44  
BGA-48-0608  
TSOP II-44  
+0OC to +70OC  
Industrial  
5mA  
45mA  
2mA  
25mA  
-40OC to +85OC  
„ PIN CONFIGURATIONS  
„ BLOCK DIAGRAM  
A4  
1
44  
A5  
A3  
2
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
A6  
A2  
3
A7  
A8  
A13  
A1  
4
OE  
A0  
5
UB  
CE  
6
LB  
A15  
DQ0  
DQ1  
DQ2  
DQ3  
VCC  
VSS  
DQ4  
DQ5  
DQ6  
DQ7  
WE  
A15  
A14  
A13  
A12  
NC  
7
DQ15  
DQ14  
DQ13  
DQ12  
VSS  
VCC  
DQ11  
DQ10  
DQ9  
DQ8  
NC  
Address  
512  
Memory Array  
9
A14  
A12  
A7  
8
Input  
Row  
Decoder  
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
Buffer  
512 x 2048  
BS616LV1010EC  
BS616LV1010EI  
A6  
A5  
A4  
2048  
A8  
DQ0  
.
.
.
.
.
.
Data  
16  
16  
Column I/O  
16  
A9  
Input  
.
.
.
.
.
.
A10  
A11  
NC  
Buffer  
Write Driver  
Sense Amp  
16  
Data  
Output  
Buffer  
128  
1
2
3
4
5
6
Column Decoder  
DQ15  
NC  
A
B
C
D
E
F
LB  
D8  
OE  
A0  
A1  
A2  
7
CE  
WE  
OE  
UB  
LB  
UB  
D10  
D11  
D12  
D13  
NC  
A3  
A5  
A4  
A6  
CE  
D1  
D0  
D2  
Address Input Buffer  
Control  
D9  
VSS  
VCC  
D14  
D15  
NC  
NC  
NC  
A14  
A12  
A9  
A7  
D3  
VCC  
VSS  
D6  
A11 A9 A3 A2 A1  
A10  
A0  
VCC  
VSS  
NC  
A15  
A13  
A10  
D4  
D5  
G
H
WE  
A11  
D7  
A8  
NC  
48-ball BGA top view  
Brilliance Semiconductor, Inc. reserves the right to change products and specifications without notice.  
R0201-BS616LV1010  
Revision  
Oct.  
2.7  
1
2008  
1234567...11

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