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BS616LV1010DA70 PDF预览

BS616LV1010DA70

更新时间： 2024-11-27 03:47:39
品牌 Logo 应用领域
BSI 静态存储器
页数 文件大小 规格书
11页 202K
描述
Standard SRAM, 64KX16, 70ns, CMOS, DIE PACKAGE

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BS616LV1010DA70 数据手册

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Very Low Power CMOS SRAM  
64K X 16 bit  
BS616LV1010  
Green package materials are compliant to RoHS  
n FEATURES  
ŸWide VCC operation voltage : 2.4V ~ 5.5V  
n DESCRIPTION  
The BS616LV1010 is a high performance, very low power CMOS  
Static Random Access Memory organized as 65,536 by 16 bits and  
operates form a wide range of 2.4V to 5.5V supply voltage.  
Advanced CMOS technology and circuit techniques provide both  
high speed and low power features with typical CMOS standby  
current of 0.02uA at 3.0V/25OC and maximum access time of 70ns at  
2.4V/125OC.  
ŸVery low power consumption :  
VCC = 3.0V  
VCC = 5.0V  
Operation current : 20mA (Max.) at 70ns  
2mA (Max.) at 1MHz  
Standby current : 0.02uA (Typ.)at 25OC  
Operation current : 40mA (Max.) at 70ns  
5mA (Max.) at 1MHz  
Standby current : 0.4uA (Typ.) at 25OC  
ŸHigh speed access time :  
Easy memory expansion is provided by an active LOW chip enable  
(CE) and active LOW output enable (OE) and three-state output  
drivers.  
-70  
70ns(Max.) at VCC=2.4~5.5V  
ŸAutomatic power down when chip is deselected  
ŸEasy expansion with CE and OE options  
ŸI/O Configuration x8/x16 selectable by LB and UB pin.  
ŸThree state outputs and TTL compatible  
ŸFully static operation  
The BS616LV1010 has an automatic power down feature, reducing  
the power consumption significantly when chip is deselected.  
The BS616LV1010 is available in DICE form, JEDEC standard  
44-pin TSOP II and 48-ball BGA package.  
ŸData retention supply voltage as low as 1.5V  
n POWER CONSUMPTION  
POWER DISSIPATION  
STANDBY  
Operating  
PRODUCT  
FAMILY  
OPERATING  
TEMPERATURE  
PKG TYPE  
(ICC, Max)  
(ICCSB1, Typ.)  
(ICCSB1, Max)  
VCC=5.0V  
1MHz fMax.  
VCC=3.0V  
VCC=5.0V VCC=3.0V VCC=5.0V VCC=3.0V  
1MHz  
fMax.  
BS616LV1010AA  
BS616LV1010EA  
BGA-48-0608  
TSOP II-44  
Automotive  
Grade  
0.4uA  
0.02uA  
20uA  
8.0uA  
5mA  
40mA  
2mA  
20mA  
-40OC to +125OC  
n PIN CONFIGURATIONS  
n BLOCK DIAGRAM  
A4  
A3  
A2  
A1  
A0  
1
2
3
4
5
6
7
8
44  
A5  
A6  
A7  
OE  
UB  
LB  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
A8  
A13  
A15  
Address  
CE  
512  
Memory Array  
9
A14  
A12  
A7  
DQ0  
DQ1  
DQ2  
DQ3  
VCC  
VSS  
DQ4  
DQ5  
DQ6  
DQ7  
WE  
A15  
A14  
A13  
A12  
NC  
DQ15  
DQ14  
DQ13  
DQ12  
VSS  
VCC  
DQ11  
DQ10  
DQ9  
DQ8  
NC  
A8  
A9  
A10  
A11  
NC  
Input  
Row  
Decoder  
9
Buffer  
512 x 2048  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
A6  
BS616LV1010EC  
BS616LV1010EI  
A5  
A4  
2048  
DQ0  
Data  
Input  
Buffer  
16  
16  
16  
Column I/O  
.
.
.
.
.
.
.
.
Write Driver  
Sense Amp  
.
16  
.
Data  
Output  
Buffer  
.
.
128  
1
2
3
4
5
6
Column Decoder  
DQ15  
A
B
C
D
E
F
LB  
D8  
OE  
A0  
A1  
A2  
NC  
7
CE  
WE  
OE  
UB  
LB  
UB  
D10  
D11  
D12  
D13  
NC  
A3  
A5  
A4  
A6  
CE  
D1  
D0  
D2  
Address Input Buffer  
Control  
D9  
A11 A9 A3 A2 A1 A0 A10  
VCC  
VSS  
VSS  
VCC  
D14  
D15  
NC  
NC  
NC  
A14  
A12  
A9  
A7  
D3  
VCC  
VSS  
D6  
NC  
A15  
A13  
A10  
D4  
D5  
G
H
WE  
A11  
D7  
A8  
NC  
48-ball BGA top view  
Brilliance Semiconductor, Inc. reserves the right to change products and specifications without notice.  
R0201-BS616LV1010A  
Revision 2.5A  
Mar. 2006  
1
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