Datasheet > BS250P

BS250P

更新时间： 2023-12-06 20:09:05

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
2页	114K
描述
P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

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中文翻译

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数据手册
替代型号

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BS250P 数据手册

BS250P

P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Features and Benefits



V_DS= 45V

R_DS(ON)= 14

For automotive applications requiring specific change

control (i.e. parts qualified to AEC-Q101, PPAP capable, and

manufactured in IATF 16949 certified facilities), please

https://www.diodes.com/quality/product-definitions/



REFER TO ZVP2106A FOR GRAPHS

Absolute Maximum Ratings (@T_A= +25°C, unless otherwise specified.)

Characteristic

Symbol

VDS

Value

-45

Unit

Drain-Source Voltage

-230

Continuous Drain Current at T_A= +25°C

Pulsed Drain Current

IDM

-3

Gate Source Voltage

VGS

20

700

°C

Power Dissipation at T_A= +25°C

Operating and Storage Temperature Range

P_TOT

T_J,T_STG

-55 to +150

Electrical Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

Drain-Source Breakdown Voltage

Gate-Source Threshold Voltage

Gate-Body Leakage

Symbol

BV_DSS

V_GS(TH)

I_GSS

Min

-45

-1

Typ

—

Max

—

Unit

Test Condition

I_D= -100A, V_GS= 0V

I_D= -1mA, V_DS= V_GS

V_GS= -15V, V_DS= 0V

V_GS= 0V, V_DS= -25V

—

-3.5

-20

—

Zero Gate Voltage Drain Current

—

-500

Ω

I_DSS

Static Drain-Source On-State Resistance (Note 1)

Forward Transconductance (Note 1) (Note 2)

R_DS(ON)

g_fs

V_GS= -10V, I_D= -200mA

V_DS= -10V, I_D= -200mA

150

—

V_GS= 0V, V_DS= -10V,

f = 1.0MHz

Input Capacitance (Note 2)

—

C_iss

Turn-On Time (Note 2) (Note 3)

Turn-Off Time (Note 2) (Note 3)

—

t_(ON)

V_DD -25V, I_D= -500mA

t_(OFF)

Notes:

1. Measured under pulsed conditions. Pulse Width = 300s. Duty cycle 2%.

2. Sample test.

3. Switching times measured with a 50source impedance and <5ns rise time on a pulse generator.

1 of 2

www.diodes.com

October 2019

BS250P

Document number: DS33014 Rev. 3 - 2

中文翻译

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BS250P 替代型号

型号	品牌	替代类型	描述	数据表
BS170FTA	DIODES	功能相似	N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
DMG6968U-7	DIODES	功能相似	N-CHANNEL ENHANCEMENT MODE MOSFET
MMBF170-7-F	DIODES	功能相似	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

与BS250P相关器件

型号	品牌	获取价格	描述	数据表
BS250PM1	DIODES	获取价格	Small Signal Field-Effect Transistor, 0.23A I(D), 45V, 1-Element, P-Channel, Silicon, Meta
BS250PSM	ZETEX	获取价格	Small Signal Field-Effect Transistor, 0.23A I(D), 45V, 1-Element, P-Channel, Silicon, Meta
BS250PSMTA	DIODES	获取价格	Small Signal Field-Effect Transistor, 0.23A I(D), 45V, 1-Element, P-Channel, Silicon, Meta
BS250PSMTC	DIODES	获取价格	Small Signal Field-Effect Transistor, 0.23A I(D), 45V, 1-Element, P-Channel, Silicon, Meta
BS250PSTOA	DIODES	获取价格	暂无描述
BS250PSTOB	DIODES	获取价格	暂无描述
BS250PSTZ	DIODES	获取价格	Transistor
BS250PSTZ	ZETEX	获取价格	Small Signal Field-Effect Transistor, 0.23A I(D), 45V, 1-Element, P-Channel, Silicon, Meta
BS250-TA	VISHAY	获取价格	Small Signal Field-Effect Transistor, 0.18A I(D), 45V, 1-Element, P-Channel, Silicon, Meta
BS2540-7EPTB1	BEL	获取价格	D/A Converter,

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